IXFN21N100Q IXYS Corporation, IXFN21N100Q Datasheet - Page 3

• Manufacturer Part Number: IXFN21N100Q
• Description: HiPerFET TM Power MOSFETs Q-Class
• Manufacturer: IXYS Corporation

© 2001 IXYS All rights reserved
35
30
25
20
15
10
2.8
2.4
2.0
1.6
1.2
0.8
25
20
15
10
5
0
5
0
-50
0
Fig.1 Output Characteristics @ T
0
Fig.5 Drain Current vs. Case Temperature
Fig.3 R
T
J
V
= 25
T
GS
-25
J
= 125
= 10V
O
T
C
J
DS(on)
= 150
O
5
0
V
C
GS
o
vs. Drain Current
= 9V
10
C
T
25
C
I
8V
7V
6V
V
D
T
- Degrees C
DS
J
- Amperes
= 25
- Volts
10
50
O
C
75
20
100 125 150
15
5V
4V
j
= 25°C
20
30
2.6
2.2
1.8
1.4
1.0
24
20
16
12
8
4
0
35
30
25
20
15
10
3.0
25
Fig.6 Drain Current vs Gate Source Voltage
5
0
Fig.4 Temperature Dependence of Drain
0
Fig.2 Output Characteristics @ T
V
T
GS
J
3.5
= 125
to Source Resistance
= 10V
50
5
O
C
4.0
T
10
J
75
V
- Degrees C
4.5
T
V
GS
V
I
J
D
GS
DS
= 125
= 21A
- Volts
= 9V
IXFN 21N100Q
- Volts
15
8V
7V
6V
5.0
O
100
C
I
D
=10.5A
20
5.5
125
5V
4V
T
J
6.0
= 25
25
j
= 125°C
o
C
150
6.5
30