IXFN21N100Q IXYS Corporation, IXFN21N100Q Datasheet
IXFN21N100Q
Manufacturer Part Number
IXFN21N100Q
Description
HiPerFET TM Power MOSFETs Q-Class
Manufacturer
IXYS Corporation
Datasheet
1.IXFN21N100Q.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN21N100Q
Manufacturer:
IXYS
Quantity:
200
HiPerFET
Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2001 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
ISOL
C
C
C
C
J
C
J
J
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
, di/dt 100 A/ s, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 1.5 mA
, V
= 0.5 I
G
300 s, duty cycle d
= 2
DS
g
, High dv/dt
= 0
D25
GS
= 1 M
DD
(T
T
J
J
V
= 25 C, unless otherwise specified)
DSS
= 125 C
,
JM
2 %
IXFN 21N100Q
1000
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
typ.
1000
1000
520
150
2.5
84
21
21
60
20
30
5
0.50
100
100
max.
4.5
2
V/ns
mJ
mA
W
nA
C
C
C
V
V
V
V
A
A
A
J
V
V
A
V
I
R
t
Features
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
D25
rr
DSS
DS(on)
E153432
250 ns
DS (on)
= 1000 V
=
G
= 0.50
D = Drain
S
g
D
21 A
98762A (12/01)
S
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IXFN21N100Q Summary of contents
Page 1
TM HiPerFET Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Q , High dv/dt g Symbol Test Conditions 150 C DSS 150 C; ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...
Page 3
Volts DS Fig.1 Output Characteristics @ T 2 10V GS 2.4 O ...
Page 4
V = 500 120 Gate Charge - nC Fig.7 Gate Charge Characteristic Curve ...