FA57SA50LCP Vishay Semiconductors, FA57SA50LCP Datasheet - Page 6

• Manufacturer Part Number: FA57SA50LCP
• Description: Power MOSFET, 57 A
• Manufacturer: Vishay Semiconductors

FA57SA50LCP
Vishay Semiconductors
www.vishay.com
6
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10 V
V
G
Fig. 13a - Basic Gate Charge Waveform
Q
GS
Re-Applied
Voltage
Q
Charge
Q
[e-mail], [e-mail],
GD
G
Reverse
Recovery
Current
For technical questions within your region, please contact one of the following:
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
1
= 5V for Logic Level Devices
P.W.
SD
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
+
2
DS
-
R
D.U.T.
g
Waveform
Waveform
Fig. 14 - For N-Channel Power MOSFETs
Ripple ≤ 5%
Power MOSFET, 57 A
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
3
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device Under Test
dv/dt
Forward Drop
SD
di/dt
controlled by duty factor "D"
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
D =
-
Period
P.W.
[e-mail]
4
g
12 V
+
V
GS
Fig. 13b - Gate Charge Test Circuit
Same type as D.U.T.
V
V
I
SD
Current regulator
GS
DD
0.2 µF
=10V
+
-
V
3 mA
50 kΩ
DD
*
Current sampling resistors
0.3 µF
I
G
Document Number: 94548
D.U.T.
I
D
Revision: 12-May-10
+
-
V
DS