FA57SA50LCP Vishay Semiconductors, FA57SA50LCP Datasheet - Page 2

• Manufacturer Part Number: FA57SA50LCP
• Description: Power MOSFET, 57 A
• Manufacturer: Vishay Semiconductors

FA57SA50LCP
Vishay Semiconductors
Note
(1)
Notes
(1)
(2)
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2
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to sink, flat, greased surface
ELECTRICAL CHARACTERISTCS (T
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
Continuous source current (body diode)
Pulsed source current (body diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward turn-on time
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Pulse width ≤ 300 μs, duty cycle ≤ 2 %
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs, duty cycle ≤ 2 %
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SYMBOL
ΔV
SYMBOL
R
R
SYMBOL
R
(BR)DSS
V
thJC
thCS
V
I
J
V
DS(on)
SM
(BR)DSS
t
t
C
SD
I
I
C
Q
Q
Q
C
t
GS(th)
d(on)
d(off)
Power MOSFET, 57 A
DSS
GSS
I
t
= 25 °C unless otherwise noted)
g
Q
L
on
S
rr
t
t
oss
iss
rss
rr
gs
gd
fs
r
f
S
g
(1)
(2)
/ΔT
(1)
J
MOSFET symbol showing
the integral reverse p-n
junction diode.
T
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
V
Reference to 25 °C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead, and center of die contact
V
V
f = 1.0 MHz, see fig. 5
J
J
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
g
D
= 25 °C, I
= 25 °C, I
= 57 A
= 57 A
= 2.0 Ω (internal)
= 4.3 Ω, see fig. 10
= V
= 50 V, I
= 500 V, V
= 400 V, V
= 400 V
= 25 V
= 0 V, I
= 10 V, I
= 20 V
= - 20 V
= 10 V; see fig. 6 and 13
= 250 V
= 0 V
GS
TYP.
0.05
TEST CONDITIONS
TEST CONDITIONS
, I
-
S
D
D
F
D
D
= 57 A, V
= 1.0 mA
= 57 A, dI/dt = 100 A/μs
= 250 μA
= 34 A
= 34 A
GS
GS
= 0 V
= 0 V, T
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D
GS
= 1 mA
(1)
= 0 V
J
= 125 °C
G
(1)
MAX.
D
S
0.20
(2)
-
MIN.
MIN.
500
2.0
43
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Document Number: 94548
10 000
TYP.
1500
TYP.
0.62
225
152
108
118
901
5.0
51
98
32
50
15
-
-
-
-
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Revision: 12-May-10
S
MAX.
MAX.
- 200
1351
UNITS
0.08
228
+ L
500
200
338
147
4.0
1.3
°C/W
50
77
57
23
-
-
-
-
-
-
-
-
-
-
-
D
)
UNITS
UNITS
V/°C
μC
μA
nA
nC
nH
pF
ns
ns
Ω
S
A
V
V
V