FA57SA50LCP Vishay Semiconductors, FA57SA50LCP Datasheet

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FA57SA50LCP

Manufacturer Part Number
FA57SA50LCP
Description
Power MOSFET, 57 A
Manufacturer
Vishay Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FA57SA50LCP
Manufacturer:
COSEL
Quantity:
334
Notes
(1)
(2)
(3)
Document Number: 94548
Revision: 12-May-10
查询"FA57SA50LCP"供应商
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current at V
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Starting T
I
SD
≤ 57 A, dI/dt ≤ 200 A/μs, V
Package
J
R
V
Type
= 25 °C, L = 446 μH, R
DS(on)
DSS
I
D
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
OT-227
GS
For technical questions within your region, please contact one of the following:
DD
10 V
≤ V
g
= 25 Ω, I
(BR)DSS
Modules - MOSFET
SOT-227
, T
0.08 Ω
500 V
AS
57 A
Power MOSFET, 57 A
J
≤ 150 °C
= 57 A (see fig. 12)
SYMBOL
dV/dt
T
E
E
I
I
J
DM
AR
V
V
AR
AS
, T
P
I
ISO
GS
D
D
(1)
(1)
(2)
Stg
(1)
(3)
T
T
T
M4 screw
C
C
C
= 25 °C
= 100 °C
= 25 °C
TEST CONDITIONS
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low gate charge device
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
DESCRIPTION
Third Generation Power MOSFETs from Vishay HPP provide
the designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.
DiodesEurope@vishay.com
device
Vishay Semiconductors
design,
- 55 to + 150
MAX.
± 20
62.5
228
625
725
1.3
5.0
2.5
57
36
57
10
FA57SA50LCP
low
on-resistance
www.vishay.com
UNITS
W/°C
V/ns
Nm
mJ
mJ
°C
kV
W
A
V
A
and
1

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FA57SA50LCP Summary of contents

Page 1

... ( ( ( (3) dV/ Stg V ISO M4 screw = 57 A (see fig. 12) AS ≤ 150 ° DiodesEurope@vishay.com FA57SA50LCP Vishay Semiconductors device design, low on-resistance MAX. UNITS 228 625 W 5.0 W/°C ± 725 62 V/ 150 ° ...

Page 2

... FA57SA50LCP 查询"FA57SA50LCP"供应商 Vishay Semiconductors THERMAL RESISTANCE PARAMETER Junction to case Case to sink, flat, greased surface ELECTRICAL CHARACTERISTCS (T PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current ...

Page 3

... Revision: 12-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Power MOSFET ° 100 Fig Normalized On-Resistance vs. Temperature 15000 12000 9000 6000 3000 ° 100 Fig Typical Capacitance vs. Drain to Source Voltage 9 10 Fig Typical Gate Charge vs. Gate to Source Voltage FA57SA50LCP Vishay Semiconductors 3.0 57A 2.5 2.0 1.5 1.0 0 10V GS 0.0 -60 -40 -20 ...

Page 4

... FA57SA50LCP 查询"FA57SA50LCP"供应商 Vishay Semiconductors 1000 T = 150 C ° J 100 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig Typical Source Drain Diode Forward Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 ° 150 C ° J Single Pulse ...

Page 5

... 1500 TOP 1200 BOTTOM 900 600 300 100 125 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current FA57SA50LCP Vishay Semiconductors Notes: 1. Duty factor Peak thJC C 0.1 1 ...

Page 6

... FA57SA50LCP 查询"FA57SA50LCP"供应商 Vishay Semiconductors Charge Fig. 13a - Basic Gate Charge Waveform Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent * V www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay ...

Page 7

... Generation 3, MOSFET silicon, DBC construction - Current rating ( Single switch (see Circuit Configuration table) - SOT-227 - Voltage rating (50 = 500 V) - Low charge - P = Lead (Pb)-free CIRCUIT S G (2) LINKS TO RELATED DOCUMENTS DiodesEurope@vishay.com FA57SA50LCP Vishay Semiconductors CIRCUIT DRAWING Lead assignment D ( (1-4) www.vishay.com/doc?95036 www.vishay.com/doc?95037 www ...

Page 8

... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product ...

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