CY7C1356A-133AI Cypress Semiconductor Corporation., CY7C1356A-133AI Datasheet

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CY7C1356A-133AI

Manufacturer Part Number
CY7C1356A-133AI
Description
CY7C1356A-133AI256K x 36/512K x 18 Pipelined SRAM with NoBL? Architecture
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05161Rev. *E
Features
Functional Description
The CY7C1354A and CY7C1356A SRAMs are designed to
eliminate dead cycles when transitioning from Read to Write
or vice versa. These SRAMs are optimized for 100% bus utili-
zation and achieve Zero Bus Latency (ZBL)/No Bus
Latency (NoBL). They integrate 262,144 × 36 and 524,288
× 18 SRAM cells, respectively, with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. These employ high-speed, low-power CMOS
designs using advanced triple-layer polysilicon, double-layer
metal technology. Each memory cell consists of four
transistors and two high-valued resistors.
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current Commercial
• Zero Bus Latency™, no dead cycles between Write and
• Fast clock speed: 200, 166, 133, 100 MHz
• Fast access time: 3.2, 3.6, 4.2, 5.0 ns
• Internally synchronized registered outputs eliminate
• Single 3.3V –5% and +5% power supply V
• Separate V
• Single WEN (Read/Write) control pin
• Positive clock-edge triggered, address, data, and
• Interleaved or linear four-word burst capability
• Individual byte Write (BWa–BWd) control (may be tied
• CEN pin to enable clock and suspend operations
• Three chip enables for simple depth expansion
• Automatic power-down feature available using ZZ
• JTAG boundary scan
• Low-profile 119-bump, 14-mm × 22-mm BGA (Ball Grid
Read cycles
the need to control OE
control signal registers for fully pipelined applications
LOW)
mode or CE select
Array), and 100-pin TQFP packages
CCQ
for 3.3V or 2.5V I/O
Commercial
CC
3901 North First Street
256K x 36/512K x 18 Pipelined SRAM
7C1354A-200
560
3.2
30
All synchronous inputs are gated by registers controlled by a
positive-edge-triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, depth-expansion
Chip Enables (CE, CE
Clock Enable (CEN), Byte Write Enables (BWa, BWb, BWc,
and BWd), and Read-Write Control (WEN). BWc and BWd
apply to CY7C1354A only.
Address and control signals are applied to the SRAM during
one clock cycle, and two cycles later, its associated data
occurs, either Read or Write.
A clock enable (CEN) pin allows operation of the
CY7C1354A/CY7C1356A to be suspended as long as
necessary. All synchronous inputs are ignored when (CEN) is
HIGH and the internal device registers will hold their previous
values.
There are three chip enable pins (CE, CE
user to deselect the device when desired. If any one of these
three are not active when ADV/LD is LOW, no new memory
operation can be initiated and any burst cycle in progress is
stopped. However, any pending data transfers (Read or Write)
will be completed. The data bus will be in high-impedance
state two cycles after chip is deselected or a Write cycle is
initiated.
The CY7C1354A and CY7C1356A have an on-chip two-bit
burst counter. In the burst mode, the CY7C1354A and
CY7C1356A provide four cycles of data for a single address
presented to the SRAM. The order of the burst sequence is
defined by the MODE input pin. The MODE pin selects
between linear and interleaved burst sequence. The ADV/LD
signal is used to load a new external address (ADV/LD = LOW)
or increment the internal burst counter (ADV/LD = HIGH)
Output Enable (OE), Sleep Enable (ZZ) and burst sequence
select (MODE) are the asynchronous signals. OE can be used
to disable the outputs at any given time. ZZ may be tied to
LOW if it is not used.
Four pins are used to implement JTAG test capabilities. The
JTAG circuitry is used to serially shift data to and from the
device. JTAG inputs use LVTTL/LVCMOS levels to shift data
during this testing mode of operation.
7C1354A-166
7C1356A-166
480
3.6
30
with NoBL™ Architecture
San Jose
7C1354A-133
7C1356A-133
2
, and CE
,
CA 95134
410
4.2
30
3
), Cycle Start Input (ADV/LD),
Revised April 5, 2004
7C1356A-100
2
, CE
CY7C1354A
CY7C1356A
350
5.0
30
3
408-943-2600
) that allow the
Unit
mA
mA
ns

Related parts for CY7C1356A-133AI

CY7C1356A-133AI Summary of contents

Page 1

... The CY7C1354A and CY7C1356A have an on-chip two-bit burst counter. In the burst mode, the CY7C1354A and CY7C1356A provide four cycles of data for a single address presented to the SRAM. The order of the burst sequence is defined by the MODE input pin. The MODE pin selects between linear and interleaved burst sequence ...

Page 2

... The Functional Block Diagram illustrates simplified device operation. See Truth Table, pin descriptions, and timing diagrams for detailed information. Document #: 38-05161Rev. *E [1] Input Registers 3 [1] Input Registers CY7C1354A CY7C1356A Address Control Control Logic Sel Mux Output Registers Output Buffers DQa-DQd Address ...

Page 3

... DQa DQa CY7C1354A CY7C1356A DQa 74 DQa 73 DQa DQa 69 DQa 68 CY7C1356A (512K × 18 DQa 63 DQa DQa 59 DQa Page ...

Page 4

... DQd V CEN DQd DQd MODE TMS TDI TCK TDO CY7C1356A (512K × 18)–7 × 17 BGA ADV/ DQb ...

Page 5

... MODE is a static DC input. Input- Sleep Enable: This active HIGH input puts the device in low power Asynchronous consumption standby mode. For normal operation, this input has to be either LOW or NC. CY7C1354A CY7C1356A Pin Description are used with 3 sampled HIGH used with CE and CE ...

Page 6

... The effect of CEN sampled HIGH on the device outputs the LOW-to-HIGH clock transition did not occur. For normal operation, CEN must be sampled LOW at rising edge of clock. CY7C1354A CY7C1356A Pin Description . or to GND. CC ...

Page 7

... ADV/ Read or Write operation. The data bus activity for the current cycle takes place two clock cycles later. Input- Clock: This is the clock input to CY7C1356A. Except for OE, ZZ, and Synchronous MODE, all timing references for the device are made with respect to the rising edge of CLK ...

Page 8

... V Fourth First Address Address [5] (internal) (external) A...A A... A...A A... A...A A... A...A A... CY7C1354A CY7C1356A Pin Description or to GND. CC [4] BWa BWb BWc ...

Page 9

... L Write Next X X External L Write Next are all True. HIGH means are HIGH CY7C1354A CY7C1356A after the ZZ input returns LOW. CEN needs to active Min. Max. – 0. – 0. CYC ZZ < 0.2V 2t CYC CE CEN BWx ...

Page 10

... The MSB of the register is connected to TDI, and LSB is connected to TDO. The second column is the signal name and the third column is the bump number. The third column is the TQFP pin number and the fourth column is the BGA bump number. CY7C1354A CY7C1356A ) Page ...

Page 11

... TDI and TDO. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. Reserved Do not use these instructions. They are reserved for future use. CY7C1354A CY7C1356A 1149.1-mandatory plus t ). The CS CH Page ...

Page 12

... The “0”/”1” next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05161Rev. *E SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- Figure 1. TAP Controller State Diagram CY7C1354A CY7C1356A 1 SELECT IR-SCAN 0 1 CAPTURE-IR 0 SHIFT-IR 1 EXIT1-IR 0 PAUSE- EXIT2-IR 1 UPDATE- [21] Page ...

Page 13

... I OHC [23 8.0 mA OLT [23 8.0 mA OHT /2; undershoot: V (AC) <–0.5V for t < t /2; power-up KHKH . Control input signals (such as WEN and ADV/LD) may not have pulse widths less than t CC CY7C1354A CY7C1356A 0 Selection Circuitry [22] Min. Max. 2 0.3 CC –0.3 0.8 –5.0 5.0 –30 30 – ...

Page 14

... CS CH 27. Test conditions are specified using the load in TAP AC test conditions. Document #: 38-05161Rev. *E [26, 27] Over the Operating Range Description CY7C1354A CY7C1356A Min. Max. Unit MHz 8 ns ...

Page 15

... XXXXXX XXXXXX 00011100100 00011100100 1 1 Bit Size (x18 CY7C1354A CY7C1356A ALL INPUT PULSES 3.0V 1.5V 1 TLTH Description Reserved for revision number. Defines depth of 256K or 512K words. Defines width of x36 or x18 bits. Reserved for future use. Allows unique identification of DEVICE vendor. ...

Page 16

... CY7C1354A CY7C1356A Description (continued) Signal Name TQFP Bump ADV/ CEN 87 4M WEN 88 4H CLK BWa 93 BWb 94 5G ...

Page 17

... CY7C1354A CY7C1356A (continued) Signal Name TQFP Bump BWa 93 BWb 100 2A DQb 8 1D DQb 9 2E DQb 12 2G ...

Page 18

... V or > MAX CLK cycle time > t Min. KC < –2.0V for t < means no input lines are changing. CYC CY7C1354A CY7C1356A Ambient [28] [29,30] Temperature V CC 3.3V ± 5% 0°C to +70°C –40°C to +85°C Min. Max. 2 2.0 1.7 – ...

Page 19

... KQHZ KQLZ OEHZ CY7C1354A CY7C1356A Typ. Max 6.5 TQFP Typ 200us Vcctyp 90% Vccmin For proper RESET bring Vcc down to 0V 10% ≤ 1.0 ns (d) -6/ -7.5/ -10/ 133 MHz 100 MHz Max ...

Page 20

... etc., where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state 2 is HIGH. 2 CY7C1354A CY7C1356A (Burst Wraps around (CKE# HIGH , eliminates to initial state) current L-H clock edge) Q(A +2) Q(A ...

Page 21

... Pipeline Write ) represents the first input to the external address etc., where address bits A0 and A1 are advancing for the four-word burst in the sequence defined by the state of the CY7C1354A CY7C1356A (CKE# HIGH , eliminates (Burst Wraps around current L-H clock edge) ...

Page 22

... BW KQHZ KQLZ Q Read D Write . D(A ) represents the input data to the SRAM corresponding to address CY7C1354A CY7C1356A KQX Q Read D Write Q Page ...

Page 23

... All internal registers in the SRAM will retain their previous states. Document #: 38-05161Rev KQHZ Q KQLZ CY7C1354A CY7C1356A KQX D Page Q ...

Page 24

... Q KQX D(A ) represents the input data to the SRAM corresponding to address sampled inactive at the rising clock edge, a chip deselect cycle is initiated. The data-bus High-Z one 2 3 CY7C1354A CY7C1356A OEHZ Q D etc. 3 Page ...

Page 25

... CY7C1354A-166BGI 133 CY7C1354A-133BGI CY7C1356A-133AI Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Notes: 50.Device must be deselected when entering ZZ mode. See Cycle Descriptions Table for all possible signal conditions to deselect the device. 51. I/Os are in three-state when exiting ZZ sleep mode 52 ...

Page 26

... Package Diagrams 100-lead Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05161Rev. *E CY7C1354A CY7C1356A 51-85050-A Page ...

Page 27

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 119-Lead PBGA ( 2.4 mm) BG119 CY7C1354A CY7C1356A 51-85115-*B Page ...

Page 28

... Document History Page Document Title: CY7C1354A/CY7C1356A 256K x 36/512K x 18 Pipelined SRAM with NoBL™ Architecture Document Number: 38-05161 REV. ECN No. Issue Date ** 3000 4/21/00 *A 114095 03/12/02 *B 114095 05/30/02 *C 121473 11/14/02 *D 123143 01/18/03 *E 216628 03/24/04 Document #: 38-05161Rev. *E Orig. of Change Description of Change CXV New Data Sheet GLC Updated separate V ...

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