MT47H128M8HQ-187EIT:G Micron Technology Inc, MT47H128M8HQ-187EIT:G Datasheet - Page 48
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H128M8HQ-187EIT:G
Manufacturer Part Number
MT47H128M8HQ-187EIT:G
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H128M8HQ-187EITG.pdf
(136 pages)
Specifications of MT47H128M8HQ-187EIT:G
Lead Free Status / Rohs Status
Compliant
- Current page: 48 of 136
- Download datasheet (3Mb)
Input Electrical Characteristics and Operating Conditions
Table 15: Input DC Logic Levels
All voltages are referenced to V
Table 16: Input AC Logic Levels
All voltages are referenced to V
Figure 12: Single-Ended Input Signal Levels
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
Parameter
Input high (logic 1) voltage
Input low (logic 0) voltage
Parameter
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
Note:
Note:
Note:
1,150mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
650mV
1. V
1. Refer to AC Overshoot/Undershoot Specification (page 58).
1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
SS
SS
DDQ
Input Electrical Characteristics and Operating Conditions
+ 300mV allowed provided 1.9V is not exceeded.
Symbol
V
V
IH(DC)
IL(DC)
48
Symbol
V
V
V
V
V
IH(AC)
IH(AC)
IL(AC)
IL(AC)
REF(DC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–300
Min
+ 125
1Gb: x4, x8, x16 DDR2 SDRAM
V
V
REF(DC)
REF(DC)
V
V
V
V
V
V
V
V
IH(AC)
IH(DC)
REF
REF
REF
REF
IL(DC)
IL(AC)
–300
–300
Min
+ AC noise
+ DC error
- DC error
- AC noise
+ 250
+ 200
V
REF(DC)
2007 Micron Technology, Inc. All rights reserved.
V
Max
DDQ
V
V
REF(DC)
REF(DC)
- 125
1
V
V
Max
DDQ
DDQ
- 250
- 200
1
1
Units
mV
mV
Units
mV
mV
mV
mV
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