SA58670ABS,115 NXP Semiconductors, SA58670ABS,115 Datasheet
SA58670ABS,115
Specifications of SA58670ABS,115
935286181115
SA58670ABS
SA58670ABS-G
SA58670ABS-G
Related parts for SA58670ABS,115
SA58670ABS,115 Summary of contents
Page 1
SA58670 2.1 W/channel stereo class-D audio amplifier Rev. 03 — 11 June 2009 1. General description The SA58670 is a stereo, filter-free class-D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The ...
Page 2
... NXP Semiconductors I Educational toy 4. Ordering information Table 1. Type number Package SA58670BS 5. Block diagram right input left input Fig 1. SA58670_3 Product data sheet Ordering information Name Description HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 SA58670 16 INRP GAIN ...
Page 3
... NXP Semiconductors 6. Pinning information 6.1 Pinning (1) Exposed Die Attach Paddle (DAP). Fig 2. 6.2 Pin description Table 2. Symbol G1 OUTLP PVDD PGND OUTLN n.c. SDL SDR AVDD n.c. OUTRN PGND PVDD OUTRP G0 INRP INRN AGND SA58670_3 Product data sheet terminal 1 index area 1 G1 ...
Page 4
... NXP Semiconductors Table 2. Symbol INLN INLP - 7. Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb stg V ESD [ GND is the voltage ground on pins PGND and pin AGND. SA58670_3 Product data sheet Pin description …continued Pin Description ...
Page 5
... NXP Semiconductors 8. Static characteristics Table 4. Static characteristics unless otherwise specified amb Symbol Parameter V supply voltage DD I supply current DD I shutdown mode supply current DD(sd) PSRR power supply rejection ratio V common-mode input voltage i(cm) CMRR common mode rejection ratio V HIGH-level input voltage ...
Page 6
... NXP Semiconductors 9. Dynamic characteristics Table 5. Dynamic characteristics unless otherwise specified amb L Symbol Parameter P output power o THD+N total harmonic distortion-plus-noise SVRR supply voltage ripple rejection CMRR common mode rejection ratio Z input impedance i t delay time from d(sd-startup) shutdown to start-up V output noise voltage ...
Page 7
... NXP Semiconductors 10. Typical performance curves THD+N (%) a. G THD+N (%) b. G (1) V (2) V (3) V Fig 3. SA58670_3 Product data sheet v(cl dB. v(cl kHz Total harmonic distortion-plus-noise as a function of output power; R Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah484 ...
Page 8
... NXP Semiconductors THD+N (%) a. G THD+N (%) b. G (1) V (2) V (3) V Fig 4. SA58670_3 Product data sheet dB. v(cl dB. v(cl kHz Total harmonic distortion-plus-noise as a function of output power; R Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah486 (1) (2) ( (W) o 001aah487 ...
Page 9
... NXP Semiconductors THD+N (%) (1) P ( THD+N (%) (1) P ( Fig 5. SA58670_3 Product data sheet (1) (2) ( 350 mW 590 mV (RMS 240 mW 490 mV (RMS 120 mW 346 mV (RMS ( 260 mW 721.1 mV (RMS 180 mW 600 mV (RMS mW 424.3 mV (RMS dB. v(cl) Total harmonic distortion-plus-noise as a function of frequency; V Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifi ...
Page 10
... NXP Semiconductors THD+N (%) (1) P ( THD+N (%) (1) P ( Fig 6. SA58670_3 Product data sheet 1 ( (3) ( 825 mW 908.3 mV (RMS 550 mW 741.6 mV (RMS 275 mW 524.4 mV (RMS ( (2) ( 560 mW 1.058 V (RMS 375 mW 866 mV (RMS 190 mW 616.4 mV (RMS dB. v(cl) Total harmonic distortion-plus-noise as a function of frequency; V Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifi ...
Page 11
... NXP Semiconductors THD+N (%) (1) P ( THD+N (%) (1) P ( Fig 7. SA58670_3 Product data sheet ( ( 1.285 V (RMS 1 1.05 V (RMS 550 mW 741.6 mV (RMS ( ( 1.523 V (RMS 775 mW 1.245 V (RMS 380 mW 871.8 mV (RMS dB. v(cl) Total harmonic distortion-plus-noise as a function of frequency; V Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifi ...
Page 12
... NXP Semiconductors (dB) (1) V (2) V (3) V (4) V Fig 8. V (1) Left channel. (2) Right channel. Fig 9. SA58670_3 Product data sheet (1) (2) 100 (3) (4) 120 3 channel to R channel 3 channel to L channel 5 channel to R channel 5 channel to L channel. DD Crosstalk (stepped all-to-one function of frequency 3 10 n(o) ( (1) (2) ...
Page 13
... NXP Semiconductors (dB (dB (1) V (2) V (3) V Fig 10. Crosstalk (one-to-one function of frequency SA58670_3 Product data sheet 100 120 (1) (2) 100 (3) 120 Rev. 03 — 11 June 2009 2.1 W/channel stereo class-D audio amplifier (1) (2) ( SA58670 001aah505 (kHz) 001aah506 (kHz) © NXP B.V. 2009. All rights reserved. ...
Page 14
... NXP Semiconductors (V) 4 3 Fig 11. Supply voltage as a function of shutdown voltage 1600 I DD (mA) 1200 800 (1) (2) (3) 400 0 0 0 Fig 13. Supply current as a function of output power SA58670_3 Product data sheet 001aah507 5 V (mA (V) SDR; SDL Fig 12. Supply current as a function of supply voltage ...
Page 15
... NXP Semiconductors 0.8 P (W) 0.6 (2) 0.4 (3) 0 0 Fig 14. Power dissipation as a function of output power 100 po 80 (2) ( 0 Fig 15. Output power efficiency as a function of output power SA58670_3 Product data sheet 001aah511 (1) 1.2 1.6 2.0 P (W) o 001aah513 (1) 1.2 1 ...
Page 16
... NXP Semiconductors 11. Application information Fig 16. SA58670 application schematic 11.1 Power supply decoupling considerations The SA58670 is a stereo class-D audio amplifier that requires proper supply voltage decoupling to ensure the rated performance for THD+N and power efficiency. To decouple high frequency transients, supply voltage spikes and digital noise on the supply voltage bus line, a low Equivalent Series Resistance (ESR) capacitor of typically placed as close as possible to the PVDD pins of the SA58670 ...
Page 17
... NXP Semiconductors Table 6. G1 LOW LOW HIGH HIGH Since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio amplifier important to consider this during the system design. Small speakers in wireless and cellular phones usually do not respond well to low frequency signals, so the 3 dB cut-off frequency may be increased to block the low frequency signals to the speakers ...
Page 18
... NXP Semiconductors 11.5 Efficiency and thermal considerations The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In factor is given as 41.6 mW/K. The device thermal resistance, R power derating factor. Convert the power derating factor j-a For a maximum allowable junction temperature T maximum device dissipation of 1 ...
Page 19
... NXP Semiconductors 12. Package outline HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 0.85 mm terminal 1 index area terminal 1 20 index area DIMENSIONS (mm are the original dimensions) (1) A UNIT max. 0.05 0. 0.2 0.00 0.18 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...
Page 20
... NXP Semiconductors 13. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 13.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...
Page 21
... NXP Semiconductors 13.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...
Page 22
... NXP Semiconductors Fig 18. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 14. Abbreviations Table 9. Acronym DAP DVD EMI ESR LC PC PCB PDA PWM USB SA58670_3 Product data sheet ...
Page 23
... NXP Semiconductors 15. Revision history Table 10. Revision history Document ID Release date SA58670_3 20090611 • Modifications: Table 4 “Static – Changed V – Changed V SA58670_2 20081023 SA58670_1 20080104 SA58670_3 Product data sheet 2.1 W/channel stereo class-D audio amplifier Data sheet status Product data sheet characteristics” ...
Page 24
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 25
... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Limiting values Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 10 Typical performance curves . . . . . . . . . . . . . . . 7 11 Application information 11.1 Power supply decoupling considerations . . . . 16 11 ...