STM32F417IGH6 STMicroelectronics, STM32F417IGH6 Datasheet - Page 64

• Manufacturer Part Number: STM32F417IGH6
• Description: Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM
• Manufacturer: STMicroelectronics

Specifications of STM32F417IGH6

• Core: ARM Cortex M4
• Processor Series: STM32F4
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 168 MHz
• Program Memory Size: 1024 KB
• Data Ram Size: 192 KB
• On-chip Adc: Yes
• Number Of Programmable I/os: 140
• Number Of Timers: 10
• Operating Supply Voltage: 1.7 V to 3.6 V
• Package / Case: UFBGA-176
• Mounting Style: SMD/SMT
• A/d Bit Size: 12 bit
• A/d Channels Available: 24
• Interface Type: CAN, I2C, I2S, SPI, UART
• Program Memory Type: Flash
• Lead Free Status / Rohs Status: Details

Electrical characteristics
5.3.6
64/156
Table 15.
1. TBD stands for “to be defined”.
2. The product behavior is guaranteed by design down to the minimum V
3. Guaranteed by design, not tested in production.
4. The reset temporization is measured from the power-on (POR reset or wakeup from V
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run mode current consumption measurements given in this section are performed using
a CoreMark-compliant code.
Typical and maximum current consumption
The MCU is placed under the following conditions:
●
●
●
T
RSTTEMPO
V
when first instruction is read by the user application code.
E
Symbol
BORhyst
I
At startup, all I/O pins are configured as analog inputs by firmware.
All peripherals are disabled except if it is explicitly mentioned.
The
30 MHz, 1 wait state from 30 to 60 MHz, 2 wait states from 60 to 90 MHz, 3 wait states
V
V
V
RUSH
RUSH
BOR1
BOR2
BOR3
Flash
(3)
(3)
(3)
(3)(4)
Embedded reset and power control block characteristics
scheme.
memory access time is adjusted to f
Brownout level 1
threshold
Brownout level 2
threshold
Brownout level 3
threshold
BOR hysteresis
Reset temporization
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
Parameter
Doc ID 022063 Rev 1
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
V
I
RUSH
DD
= 1.8 V, T
= 171 mA for 31 µs
Conditions
HCLK
A
= 105 °C,
Figure 19: Current consumption
frequency (0 wait state from 0 to
POR/PDR
STM32F415xx, STM32F417xx
2.13
2.23
2.44
2.53
2.75
2.85
Min
0.5
value.
-
-
-
BAT
2.19
2.29
2.50
2.59
2.83
2.92
Typ
100
160
1.5
(1)
-
) to the instant
(continued)
Max
2.24
2.33
2.56
2.63
2.88
2.97
200
3.0
5.4
-
Unit
mV
mA
ms
µC
V
V
V
V
V