LMH6658MA National Semiconductor, LMH6658MA Datasheet - Page 4

• Manufacturer Part Number: LMH6658MA
• Description: Op Amps
• Manufacturer: National Semiconductor

Specifications of LMH6658MA

• Number Of Channels: 2
• Voltage Gain Db: 95 dB
• Common Mode Rejection Ratio (min): 72 dB
• Input Offset Voltage: 5 mV at 5 V
• Operating Supply Voltage: 5 V, 9 V
• Supply Current: 17 mA at 5 V
• Maximum Operating Temperature: + 85 C
• Package / Case: SOIC-8 Narrow
• Maximum Dual Supply Voltage: +/- 6 V
• Minimum Operating Temperature: - 40 C

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GB
SSBW
GFP
GFR
LPD
GF
PBW
DG
DP
Time Domain Response
t
OS
t
SR
Distortion and Noise Response
HD2
HD3
THD
V
I
XTLKA
Static, DC Performance
A
CMVR
V
TC V
I
TC
r
s
n
B
Symbol
n
VOL
OS
Unless otherwise specified, all limits guaranteed for at T
fied) tied to 0V. Boldface limits apply at the temperature extremes.
±
IB
0.1dB
1˚
5V Electrical Characteristics
OS
Gain Bandwidth Product
−3dB BW
Frequency Response Peaking
Frequency Response Rolloff
1˚ Linear Phase Deviation
0.1dB Gain Flatness
Full Power Bandwidth
Differential Gain
Differential Phase
Rise and Fall Time
Overshoot, Undershoot
Settling Time
Slew Rate (Note 8)
2
3
Total Harmonic Distortion
Input-Referred Voltage Noise
Input-Referred Current Noise
Cross-Talk Rejection
(LMH6658)
Large Signal Voltage Gain
Input Common-Mode Voltage
Range
Input Offset Voltage
Input Offset Voltage Average
Drift
Input Bias Current
Input Bias Current Average
Drift
nd
rd
Harmonic Distortion
Harmonic Distortion
Parameter
V
A
A
A
DC to 100MHz
A
DC to 100MHz
A
A
−1dB, V
NTSC, R
Video
NTSC,R
Video
A
A
A
V
A
A
A
f = 5MHz, V
f = 5MHz, V
f = 5MHz, V
f = 100KHz
f = 1KHz
f = 100KHz
f = 1KHz
f = 5MHz, R
RCV: R
V
V
V
CMRR ≥ 50dB
(Note 12)
(Note 7)
(Note 12)
OUT
V
V
V
V
V
V
V
V
V
O
V
V
V
O
O
O
= +1, V
= +2 or −1, V
= +2, V
= +2, V
= +2, V
= +2,
= +2, V
= −1, V
= +2, V
= −1
= −1, V
= +2, V
= −3.5V to 3.5V, R
= 5V
= −3.75V to 3.75V, R
= −3V to 3V, R
<
F
OUT
L
200mV
PP
L
±
= R
= 150Ω, Pos. or Neg.
= 150Ω, Pos. or Neg.
,
OUT
OUT
OUT
OUT
0.1dB, V
OUT
OUT
OUT
O
O
O
O
O
±
L
Conditions
= 8V
= 8V
= 8V
G
J
0.1%, R
(SND) = 100Ω
= 2V
= 2V
= 2V
= 25˚C, V
= 200mV
= 200mV
= 200mV
= 200mV
= 500mV
= 500mV
= 500mV
= 1k
PP
OUT
PP
PP
PP
L
PP
PP
PP
OUT
, A
4
= 50Ω
= 200mV
, A
, A
, A
L
L
V
=500Ω,
= 150Ω
= 200mV
V
V
V
PP
PP
PP
PP
PP
PP
PP
= −1
+
L
= -1
= -1
= -1
= 5V, V
,
,
,
= 2k
±
1˚
PP
PP
−
= −5V, V
(Note 6)
−5.2
−5.1
Min
220
3.0
2.8
87
80
75
CM
= V
O
(Note 5)
, and R
−55.5
±
0.03
−5.5
0.01
Typ
140
270
100
700
500
−70
−57
100
1.0
0.9
0.1
3.3
3.3
2.1
7.5
3.3
±
−5
30
20
30
16
35
11
19
69
90
85
1.0
2
L
= 100Ω (or as speci-
(Note 6)
Max
−20
−30
±
±
5
7
nV/
pA/
nA/˚C
Units
µV/C
MHz
MHz
MHz
MHz
MHz
V/µs
dBc
dBc
dBc
deg
mV
dB
dB
dB
dB
µA
ns
ns
%
%
V