LMH6658MA National Semiconductor, LMH6658MA Datasheet - Page 2

• Manufacturer Part Number: LMH6658MA
• Description: Op Amps
• Manufacturer: National Semiconductor

Specifications of LMH6658MA

• Number Of Channels: 2
• Voltage Gain Db: 95 dB
• Common Mode Rejection Ratio (min): 72 dB
• Input Offset Voltage: 5 mV at 5 V
• Operating Supply Voltage: 5 V, 9 V
• Supply Current: 17 mA at 5 V
• Maximum Operating Temperature: + 85 C
• Package / Case: SOIC-8 Narrow
• Maximum Dual Supply Voltage: +/- 6 V
• Minimum Operating Temperature: - 40 C

www.national.com
GB
SSBW
GFP
GFR
LPD
GF
PBW
DG
DP
Time Domain Response
t
OS
t
SR
Distortion and Noise Response
HD2
HD3
THD
V
I
XTLKA
Static, DC Performance
r
s
n
Symbol
n
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at T
specified) tied to V
V
Output Short Circuit Duration
Input Current
Supply Voltage (V
Voltage at Input/Output pins
0.1dB
ESD Tolerance
Soldering Information
Infrared or Convection (20 sec.)
IN
1˚
Human Body Model
Machine Model
Differential
Gain Bandwidth Product
−3dB BW
Frequency Response Peaking
Frequency Response Rolloff
1˚ Linear Phase Deviation
0.1dB Gain Flatness
Full Power Bandwidth
Differential Gain
Differential Phase
Rise and Fall Time
Overshoot, Undershoot
Settling Time
Slew Rate (Note 8)
2
3
Total Harmonic Distortion
Input-Referred Voltage Noise
Input-Referred Current Noise
Cross-Talk Rejection
(LMH6658)
nd
rd
Harmonic Distortion
Harmonic Distortion
+
+
/2. Boldface limits apply at the temperature extremes.
Parameter
- V
−
)
V
V
A
A
A
DC to 100MHz
A
DC to 100MHz
A
A
−1dB, V
NTSC, V
V
NTSC, V
Pos. Video Only
A
A
A
V
V
A
A
f = 5MHz, V
f = 5MHz, V
f = 5MHz, V
f = 100KHz
f = 1KHz
f = 100KHz
f = 1KHz
f = 5MHz, R
RCV: R
(Note 3), (Note 11)
+
OUT
V
V
V
V
V
V
+
V
V
V
O
+
V
V
/2, Pos. Video Only
/2, A
+0.8V, V
= +1, V
= +2 or −1, V
= +2, V
= +2, V
= +2, V
= +2,
= +2, V
= −1, V
= +2, V
= −1, V
= +2, V
= 2V
(Note 1)
200V (Note 9)
<
2KV(Note 2)
V
F
OUT
PP
200mV
CM
CM
= −1
±
= R
,
OUT
OUT
OUT
OUT
OUT
OUT
OUT
O
O
0.1dB, V
−
±
±
O
O
O
L
= 2V, R
= 2V, R
Conditions
= 3V
= 3V
= 3V
J
G
±
235˚C
−0.8V
10mA
12.6V
0.1%, R
(SND) = 100Ω
= 2V
= 2V
= 2V
= 25˚C, V
2.5V
= 200mV
= 200mV
= 200mV
= 200mV
= 500mV
= 500mV
= 500mV
= 1k
PP
OUT
PP
PP
PP
PP
PP
PP
OUT
, A
2
L
L
(Note 13)
(Note 13)
=150Ω to V
= 200mV
, A
, A
, A
L
= 150Ω to
V
= 500Ω to
Operating Ratings
= 200mV
V
V
V
PP
PP
PP
PP
= −1
PP
PP
PP
+
Storage Temperature Range
Junction Temperature (Note 4)
Supply Voltage (V
Operating Temperature Range
(Note 4)
Package Thermal Resistance (θ
Wave Soldering (10 sec.)
= -1
= -1
= -1
= 5V, V
,
,
,
SC70
SOT23–5
MSOP-8
SOIC-8
±
1˚
PP
+
PP
/2
−
= 0V, V
(Note 6)
Min
220
+
CM
– V
= V
−
)
O
(Note 5)
= V
−55.5
0.03
Typ
140
270
100
470
420
−70
−57
1.5
0.5
0.1
3.3
3.4
2.1
7.5
30
13
55
18
37
11
19
69
(Note 1)
+
JA
/2, and R
)(Note 4)
(Note 6)
Max
L
= 100Ω (or as
−40˚C to +85˚C
−65˚C to +150˚C
3V to 12V
nV/
pA/
478˚C/W
265˚C/W
235˚C/W
190˚C/W
Units
MHz
MHz
MHz
MHz
MHz
V/µs
deg
dBc
dBc
dBc
dB
dB
dB
+150˚C
ns
ns
%
%
260˚C