IPD26N06S2L35XT Infineon Technologies, IPD26N06S2L35XT Datasheet - Page 7

• Manufacturer Part Number: IPD26N06S2L35XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD26N06S2L35XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Power Dissipation: 68W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
350
300
250
200
150
100
= f(T
50
0
66
64
62
60
58
56
54
52
50
25
-60
= f(T
j
)
D
j
); I
50
13 A
-20
26 A
6.5 A
D
= 1 mA
75
20
T
T
100
j
j
60
[°C]
[°C]
125
100
140
150
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
= 26 A pulsed
Q
Q
g
g
Q
Q
Q
gate
gd
gd
10
[nC]
11 V
IPD26N06S2L-35
Q
Q
gate
gate
2006-07-18
44 V
20