IPD26N06S2L35XT Infineon Technologies, IPD26N06S2L35XT Datasheet - Page 5

• Manufacturer Part Number: IPD26N06S2L35XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD26N06S2L35XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Power Dissipation: 68W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
60
50
40
30
20
10
60
50
40
30
20
10
0
0
DS
0
GS
1
); T
); V
GS
j
j
DS
= 25 °C
= 6V
1
2
10 V
5 V
4.5 V
2
V
V
GS
DS
3
[V]
[V]
3
-55 °C
3.5 V
3 V
2.5 V
4 V
4
25 °C
4
175 °C
page 5
5
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
60
50
40
30
20
10
100
0
90
80
70
60
50
40
30
20
10
= (I
D
0
); T
0
D
3 V
); T
j
= 25°C
fs
GS
10
j
10
= 25 °C
3.5 V
20
20
I
I
D
D
30
[A]
[A]
30
IPD26N06S2L-35
4 V
40
4.5 V
10 V
10 V
40
50
2006-07-18
50
60