NVMFD5877NLT1G ON Semiconductor, NVMFD5877NLT1G Datasheet - Page 4

• Manufacturer Part Number: NVMFD5877NLT1G
• Description: MOSFET N-CH 60V 17A 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NVMFD5877NLT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 25V
• Power - Max: 3.2W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
800
700
600
500
400
300
200
100
100
10
0
1
0
1
V
I
V
C
D
Figure 9. Resistive Switching Time Variation
DD
GS
rss
= 5 A
C
C
= 48 V
= 10 V
iss
oss
5
Figure 7. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (V)
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
10
0.01
100
0.1
10
15
10
1
0.1
0 V ≤ V
Single Pulse
T
R
Thermal Limit
Package Limit
C
Figure 11. Maximum Rated Forward Biased
DS(on)
= 25°C
20
GS
TYPICAL CHARACTERISTICS
Limit
10 ms
≤ 20 V
V
T
1 ms
V
J
GS
25
Safe Operating Area
DS
dc
= 25°C
http://onsemi.com
1
= 0 V
, DRAIN VOLTAGE (V)
t
t
t
t
d(off)
d(on)
f
r
10 ms
30
100 ms
100
4
10
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
0.1
10
0
V
T
Q
J
GS
Figure 8. Gate−to−Source vs. Gate Charge
gs
1
= 25°C
0.2
= 0 V
V
Figure 10. Diode Forward Voltage
SD
2
0.3
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
g
3
, TOTAL GATE CHARGE (nC)
gd
0.4
100
4
0.5
5
Q
T
6
0.6
7
0.7
8
T
V
I
D
J
DD
0.8
= 5 A
= 25°C
9
= 48 V
0.9
10
1.0
11