NVMFD5877NLT1G ON Semiconductor, NVMFD5877NLT1G Datasheet - Page 3

• Manufacturer Part Number: NVMFD5877NLT1G
• Description: MOSFET N-CH 60V 17A 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NVMFD5877NLT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 25V
• Power - Max: 3.2W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.065
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
40
36
32
28
24
20
16
12
8
4
0
−50
3
0
V
Figure 3. On−Resistance vs. Gate−to−Source
I
D
GS
= 7.5 A
−25
Figure 5. On−Resistance Variation with
V
= 10 V
Figure 1. On−Region Characteristics
GS
4
V
V
DS
GS
T
= 10 V
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
5
25
Temperature
2
6
Voltage
50
75
7
3
5 V
100
TYPICAL CHARACTERISTICS
8
125
T
I
4
D
T
J
J
= 25°C
= 10 A
9
= 25°C
http://onsemi.com
150
4.5 V
4.0 V
3.5 V
3.0 V
175
10
5
3
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−12
1E−11
0.065
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
30
20
10
0
1
5
5
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
DS
J
GS
10
= 25°C
≥ 10 V
8
= 0 V
V
V
Figure 2. Transfer Characteristics
DS
GS
15
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
T
10
2
J
20
I
= 125°C
D
T
, DRAIN CURRENT (A)
J
25
13
= 25°C
Gate Voltage
vs. Voltage
V
V
GS
GS
30
= 4.5 V
= 10 V
15
3
T
T
T
35
J
J
J
= 150°C
= 125°C
= 25°C
T
J
18
= −55°C
40
45
20
4
50
23
55
25
60
5