NVMFD5877NLT1G ON Semiconductor, NVMFD5877NLT1G Datasheet

NVMFD5877NLT1G

Manufacturer Part Number

NVMFD5877NLT1G

Description

MOSFET N-CH 60V 17A 8SOIC

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NVMFD5877NLT1G.pdf (6 pages)

Specifications of NVMFD5877NLT1G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

39 mOhm @ 7.5A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

5.9nC @ 4.5V

Input Capacitance (ciss) @ Vds

540pF @ 25V

Power - Max

3.2W

Mounting Type

Surface Mount

Package / Case

8-VDFN Exposed Pad

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NVMFD5877NLT1G

Manufacturer:

SONY

Quantity:

200

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

NVMFD5877NLT1G

Current page: 1 of 6
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NVMFD5877NL

Power MOSFET

60 V, 39 mW, 17 A, Dual N−Channel, Logic

Level, Dual SO8FL

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The entire application environment impacts the thermal resistance values shown,

2. Psi (Y) is used as required per JESD51−12 for packages in which

3. Surface−mounted on FR4 board using a 650 mm

4. Maximum current for pulses as long as 1 second is higher but is dependent

MAXIMUM RATINGS

August, 2011 − Rev. 2

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Cur-

rent R

2, 3, 4)

Power Dissipation

Continuous Drain Cur-

rent R

3, 4)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Mounting Board (top) − Steady

State (Note 2, 3)

Junction−to−Ambient − Steady State (Note 3)

L(pk)

Small Footprint (5x6 mm) for Compact Designs

Low R

Low Capacitance to Minimize Driver Losses

175°C Operating Temperature

AEC−Q101 Qualified

This is a Pb−Free Device

This Device uses Halogen−Free Molding Compound

YJ−mb

qJA

they are not constants and are only valid for the particular conditions noted.

substantially less than 100% of the heat flows to single case surface.

on pulse duration and duty cycle.

(Notes 1, 3)

= 14.5 A, L = 0.1 mH, R

YJ−mb

qJA

(Notes 1, 2, 3)

DS(on)

(Notes 1 &

= 25°C, V

(Notes 1,

to Minimize Conduction Losses

Parameter

= 24 V, V

Steady

State

= 25°C unless otherwise noted)

= 25°C, t

= 25 W)

= 10 V,

= 100°C

= 25°C

= 100°C

= 10 ms

= 25°C

Symbol

YJ−mb

, 2 oz. Cu pad.

, T

DSS

qJA

(Note 1)

stg

Value

−55 to

Value

+175

"20

10.5

6.5

260

3.2

1.6

°C/W

Unit

°C

NVMFD5877NLT1G

NVMFD5877NLT3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 506BT

(BR)DSS

60 V

DFN8 5x6

(*Note: Microdot may be in either location)

(SO8FL)

Device

ORDERING INFORMATION

5877NL = Specific Device Code

http://onsemi.com

Dual N−Channel

60 mW @ 4.5 V

39 mW @ 10 V

= Assembly Location

= Year

= Work Week

= Pb−Free Package*

DS(on)

(Pb−Free)

Package

DFN8

MARKING DIAGRAM

Publication Order Number:

MAX

AYWWG

5877NL

1500/Tape & Reel

5000/Tape & Reel

NVMFD5877NL/D

Shipping

17 A

MAX

†

Related parts for NVMFD5877NLT1G

NVMFD5877NLT1G Summary of contents

Page 1

... 10 (*Note: Microdot may be in either location) T 260 °C L Device NVMFD5877NLT1G (Note 1) NVMFD5877NLT3G Symbol Value Unit †For information on tape and reel specifications, R 6.5 °C/W YJ−mb including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification R 47 Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.065 0.060 0.055 0.050 0.045 0.040 0.035 0.030 0.025 3 ...

Page 4

C iss 600 500 400 300 200 C oss 100 C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

Page 5

Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 12. Thermal Response http://onsemi.com 5 2 Device Mounted on 650 mm 2 ...

Page 6

... PITCH 5.55 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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