DMG1026UV-7 Diodes Inc, DMG1026UV-7 Datasheet - Page 4

• Manufacturer Part Number: DMG1026UV-7
• Description: MOSFET DL N-CH 60V 440MA SOT-563
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMG1026UV-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 440mA
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 0.21nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 580mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMG1026UV-7DITR

DMG1026UV
Document number: DS35068 Rev. 1 - 2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
10
-50 -25
1
0
0.001
5
T , AMBIENT TEMPERATURE (°C)
0.01
V , DRAIN-SOURCE VOLTAGE (V)
0.000001
A
0.1
DS
I = 250µA
D
Fig. 9 Typical Total Capacitance
1
0
C
D = 0.01
D = 0.005
C
10
D = 0.1
D = 0.02
D = 0.7
D = 0.05
rss
D = 0.5
D = 0.3
oss
D = Single Pulse
25
C
15
0.00001
iss
50
I = 1mA
D
20
75
0.0001
25
100
30
f = 1MHz
125 150
0.001
35
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
40
0.01
www.diodes.com
D = 0.9
4 of 6
0.1
10,000
1,000
1,000
800
600
400
200
100
10
0
1
0
0
1
Fig. 8 Diode Forward Voltage vs. Current
5
0.2
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
SD
DS
10
Fig. 10 Typical Leakage Current
P(pk)
vs. Drain-Source Voltage
15
Duty Cycle, D = t /t
T - T = P * R
10
0.4
R
J
R
θJA
θ
JA
t
(t) = r(t) *
A
1
20
t
= 220°C/W
2
0.6
25
100
θ
R
JA
θ
1 2
T = 25°C
JA
(t)
A
30
0.8
T = 25°C
35
T = 150°C
T = 125°C
T = 85°C
1,000
DMG1026UV
A
A
A
A
40
1.0
© Diodes Incorporated
45 50
1.2
June 2011