DMG1026UV-7 Diodes Inc, DMG1026UV-7 Datasheet - Page 2

• Manufacturer Part Number: DMG1026UV-7
• Description: MOSFET DL N-CH 60V 440MA SOT-563
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMG1026UV-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 440mA
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 0.21nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 580mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMG1026UV-7DITR

Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 5) V
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 5) V
Pulsed Drain Current (Note 6)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Note 5) t ≤ 10s
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Continuous Source Current (Note 7)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG1026UV
Document number: DS35068 Rev. 1 - 2
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t ≤ 10s.
6. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Characteristic
@T
A
= 25°C unless otherwise specified
J
= 25°C
GS
GS
GS
GS
Characteristic
Characteristic
= 10V
= 10V
= 4.5V
= 4.5V
@ T
A
A
A
= 25°C unless otherwise stated
= 25°C (Note 4)
= 25°C (Note 5) t ≤ 10s
Steady
Steady
t ≤ 10s
t ≤ 10s
State
State
Symbol
R
BV
V
DS (ON)
t
t
I
C
I
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
I
oss
t
t
SD
rss
DSS
S
iss
gs
gd
r
fs
f
g
g
|
www.diodes.com
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
Min
2 of 6
0.5
60
80
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
= 85°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
22.2
11.6
Typ
580
133
305
205
1.2
1.4
0.8
4.2
2.9
3.8
3.0
28
85
-
-
-
-
-
-
±150
Max
±50
200
1.0
1.8
1.8
2.1
1.3
Symbol
T
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
J
V
R
R
V
,
P
P
I
T
DSS
GSS
DM
θJA
θJA
I
I
I
I
D
D
D
D
D
D
STG
Unit
mA
mS
μA
nA
nA
pC
pF
ns
ns
ns
ns
Ω
Ω
V
V
V
-55 to +150
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
I
D
D
GS
DS
GS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
L
= 250mA
= 200mA
Value
Max
= 150Ω, R
0.58
0.65
213
192
±20
410
300
440
320
380
270
410
295
1.0
60
= 0V, I
= 50V, V
= ±5V, V
= ±10V, V
= V
= 10V, I
= 4.5V, I
= 10V, I
= 0V, I
= 25V, V
= 0V, V
= 4.5V, V
= 10V, V
GS
Test Condition
DMG1026UV
, I
D
S
GS
D
D
D
= 200mA
= 250μA
D
GS
DS
GS
DS
G
DS
= 250μA
= 200mA
= 500mA
DS
= 200mA
= 0V, f = 1MHz
= 25Ω,
-
= 0V
= 0V
= 0V,
= 30V,
© Diodes Incorporated
= 10V,
= 0V
°C/W
°C/W
Unit
Unit
mA
mA
mA
mA
June 2011
°C
W
W
V
V
A