DMG1026UV-7 Diodes Inc, DMG1026UV-7 Datasheet - Page 3

• Manufacturer Part Number: DMG1026UV-7
• Description: MOSFET DL N-CH 60V 440MA SOT-563
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMG1026UV-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 440mA
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 0.21nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 580mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMG1026UV-7DITR

DMG1026UV
Document number: DS35068 Rev. 1 - 2
1.0
0.8
0.6
0.4
0.2
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0
0
0
0
-50 -25
Fig. 5 On-Resistance Variation with Temperature
I = 200mA
V
D
GS
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
I = 500mA
200
V
= 4.5V
D
V , DRAIN-SOURCE VOLTAGE (V)
D
GS
DS
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Typical Output Characteristic
Fig. 3 Typical On-Resistance
1
A
= 10V
0
V
GS
400
V
= 3.0V
25
GS
2
V
V
GS
V
= 3.5V
GS
GS
V
= 4.0V
GS
= 4.5V
= 10V
50
= 4.5V
600
V
GS
3
= 1.5V
75
100
800
V
V
GS
GS
4
= 2.0V
= 2.5V
125 150
1,000
5
www.diodes.com
3 of 6
1,000
3.0
2.0
1.0
2.5
1.5
0.5
800
600
400
200
5
4
3
2
1
0
0
0
0
-50 -25
0
Fig. 6 On-Resistance Variation with Temperature
V
GS
= 4.5V
0.5
V
200
vs. Drain Current and Temperature
T , AMBIENT TEMPERATURE (°C)
DS
V
Fig. 2 Typical Transfer Characteristic
T = 85°C
A
A
GS
Fig. 4 Typical On-Resistance
= 5V
T = 125°C
V
I = 200mA
D
A
, GATE-SOURCE VOLTAGE (V)
0
GS
I , DRAIN CURRENT (A)
1
D
T = 150°C
= 4.5V
A
400
25
1.5
I = 500mA
V
D
GS
= 10V
T = -55°C
50
A
2
600
T = 25°C
A
75
2.5
T = 150°C
A
T = -55°C
T = 125°C
T = 85°C
T = 25°C
A
A
A
A
DMG1026UV
100
800
3
© Diodes Incorporated
125 150
3.5
1,000
June 2011
4