STM32F407IGT6 STMicroelectronics, STM32F407IGT6 Datasheet - Page 84

• Manufacturer Part Number: STM32F407IGT6
• Description: IC MCU 32BIT 1MB FLASH 176LQFP
• Manufacturer: STMicroelectronics

Specifications of STM32F407IGT6

• Core Processor: ARM Cortex-M4
• Core Size: 32-Bit
• Speed: 168MHz
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART, USB OTG
• Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 140
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 192K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Core: ARM Cortex M4
• Processor Series: STM32F4
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 168 MHz
• Data Ram Size: 192 KB
• On-chip Adc: Yes
• Number Of Programmable I/os: 140
• Number Of Timers: 10
• Operating Supply Voltage: 1.7 V to 3.6 V
• Mounting Style: SMD/SMT
• A/d Bit Size: 12 bit
• A/d Channels Available: 24
• Interface Type: CAN, I2C, I2S, SPI, UART
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11604

Electrical characteristics
5.3.13
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Table 36.
1. TBD stands for “to be defined”.
2. Guaranteed by design, not tested in production.
3. The maximum programming time is measured after 100K erase operations.
4. V
Table 37.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
Symbol
t
t
t
ERASE128KB
ERASE16KB
ERASE64KB
N
t
Symbol
RET
t
END
VPP
V
PP
t
V
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
t
I
prog
ME
prog
PP
PP
should only be connected during programming/erasing.
(4)
Endurance
Data retention
Parameter
Flash memory programming with V
Flash memory endurance and data retention
Double word programming
Sector (16 KB) erase time
Sector (64 KB) erase time
Sector (128 KB) erase time
Mass erase time
Programming voltage
V
Minimum current sunk on
the V
Cumulative time during
which V
PP
voltage range
PP
PP
Parameter
pin
is applied
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
= –40 to +85 °C (6 suffix versions)
Doc ID 022152 Rev 1
(2)
(2)
(2)
at T
at T
at T
Conditions
A
A
= 85 °C
= 105 °C
A
T
= 55 °C
A
Conditions
= 0 to +40 °C
PP
(1)
STM32F405xx, STM32F407xx
Min
2.7
10
7
-
-
-
-
-
-
(2)
Value
Min
30
10
20
TBD
TBD
TBD
10
Typ
6.8
16
-
-
-
-
(1)
Max
100
DD
3.6
9
1
-
-
-
-
-
(3)
(2)
and V
kcycles
Years
Unit
Unit
hour
mA
µs
V
V
SS