CY62157CV33LL-55BAI Cypress Semiconductor Corp, CY62157CV33LL-55BAI Datasheet - Page 5

• Manufacturer Part Number: CY62157CV33LL-55BAI
• Description: SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62157CV33LL-55BAI

• Package: 48FBGA
• Timing Type: Asynchronous
• Density: 8 Mb
• Typical Operating Supply Voltage: 3.3 V
• Address Bus Width: 19 Bit
• Number Of I/o Lines: 16 Bit
• Number Of Ports: 1
• Number Of Words: 512K

Document #: 38-05014 Rev. *C
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
V
I
t
t
Note:
CCDR
CDR
R
6.
7.
DR
[6]
Parameter
CE
BHE.BLE
[5]
Full Device AC operation requires linear V
BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
Parameters
1
or
V
CE
or
CC
R
V
R1
R2
2
TH
TH
Equivalent to:
OUTPUT
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
V
INCLUDING
CC
CC
JIG AND
for Data Retention
SCOPE
30 pF
OUTPUT
Description
R1
[7]
THÉVENIN EQUIVALENT
2.5V
16.6
15.4
1.20
8.0
CC
V
(Over the Operating Range)
ramp from V
CC(min.)
t
R2
CDR
R
TH
V
CE
V
CC
IN
Rise TIme: 1 V/ns
DR
1
> V
= 1.5V
> V
to V
V
CC
CC
V
GND
CC(min.)
CC
Typ
TH
Conditions
– 0.2V or V
DATA RETENTION MODE
– 0.2V or CE
1.105
1.550
0.645
3.0V
1.75
> 100 s or stable at V
10%
V
DR
IN
> 1.5 V
2
ALL INPUT PULSES
< 0.2V
< 0.2V,
90%
CC(min.)
Min.
1.5
t
RC
1.216
1.374
0.645
0
>100 s.
3.3V
1.75
90%
CY62157CV25/30/33
10%
Typ.
V
Fall Time: 1 V/ns
CC(min.)
4
t
R
[4]
V
Max.
ccmax
20
K Ohms
K Ohms
K Ohms
Volts
Unit
MoBL™
Page 5 of 13
Unit
ns
ns
V
A