CY62157CV33LL-55BAI Cypress Semiconductor Corp, CY62157CV33LL-55BAI Datasheet

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CY62157CV33LL-55BAI

Manufacturer Part Number
CY62157CV33LL-55BAI
Description
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62157CV33LL-55BAI

Package
48FBGA
Timing Type
Asynchronous
Density
8 Mb
Typical Operating Supply Voltage
3.3 V
Address Bus Width
19 Bit
Number Of I/o Lines
16 Bit
Number Of Ports
1
Number Of Words
512K

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Quantity
Price
Part Number:
CY62157CV33LL-55BAI
Manufacturer:
CY
Quantity:
6 060
Cypress Semiconductor Corporation
Document #: 38-05014 Rev. *C
Features
Functional Description
The CY62157CV25/30/33 are high-performance CMOS static
RAMs organized as 512K words by 16 bits. These devices
feature advanced circuit design to provide ultra-low active cur-
rent. This is ideal for providing More Battery Life™ (MoBL™)
in portable applications such as cellular telephones. The de-
vices also have an automatic power-down feature that signifi-
cantly reduces power consumption by 80% when addresses
are not toggling. The device can also be put into standby mode
• High speed
• Voltage range:
• Ultra-low active power
• Low standby power
• Easy memory expansion with CE
• Automatic power-down when deselected
• CMOS for optimum speed/power
Logic Block Diagram
— 55 ns and 70 ns availability
— CY62157CV25: 2.2V–2.7V
— CY62157CV30: 2.7V–3.3V
— CY62157CV33: 3.0V–3.6V
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = f
A
A
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
1
0
1
, CE
Power -down
Circuit
2
max
COLUMN DECODER
and OE features
DATA IN DRIVERS
3901 North First Street
(70 ns speed)
RAM Array
2048 × 4096
512K × 16
reducing power consumption by more than 99% when dese-
lected (CE
HIGH). The input/output pins (I/O
in a high-impedance state when: deselected (CE
CE
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE
LOW).
Writing to the device is accomplished by taking Chip Enable 1
(CE
(CE
I/O pins (I/O
fied on the address pins (A
(BHE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
Reading from the device is accomplished by taking Chip
Enable 1 (CE
2 (CE
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins will appear on I/O
I/O
ory will appear on I/O
of this data sheet for a complete description of read and write
modes.
The CY62157CV25/30/33 are available in a 48-ball FBGA
package.
7
2
1
2
. If Byte High Enable (BHE) is LOW, then data from mem-
LOW), outputs are disabled (OE HIGH), both Byte High
) and Write Enable (WE) inputs LOW and Chip Enable 2
) HIGH. If Byte Low Enable (BLE) is LOW, then data from
2
) HIGH while forcing the Write Enable (WE) HIGH. If
BHE
BLE
18
1
San Jose
).
0
HIGH or CE
1
through I/O
) and Output Enable (OE) LOW and Chip Enable
512K x 16 Static RAM
8
I/O
I/O
to I/O
0
8
7
2
–I/O
–I/O
), is written into the location speci-
0
LOW or both BLE and BHE are
BHE
WE
OE
BLE
15
through A
CY62157CV25/30/33
CA 95134
7
15
. See the truth table at the back
1
LOW and CE
0
through I/O
CE
CE
18
Revised April 23, 2002
2
). If Byte High Enable
1
8
through I/O
2
CE
CE
408-943-2600
15
HIGH and WE
2
MoBL™
) are placed
1
1
HIGH or
15
0
) is
to
0

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CY62157CV33LL-55BAI Summary of contents

Page 1

... Cypress Semiconductor Corporation Document #: 38-05014 Rev. *C reducing power consumption by more than 99% when dese- lected (CE HIGH). The input/output pins (I high-impedance state when: deselected (CE CE LOW), outputs are disabled (OE HIGH), both Byte High 2 Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW) ...

Page 2

Pin Configurations Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ...–0.5V ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current IX I Output Leakage Current GND < V ...

Page 4

Parameter Description V Output HIGH Voltage Output LOW Voltage Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage IX Current I Output Leakage OZ Current I V Operating Supply CC CC ...

Page 5

AC Test Loads and Waveforms OUTPUT 30 pF INCLUDING JIG AND SCOPE Equivalent to: THÉVENIN EQUIVALENT OUTPUT Parameters 2. Data Retention Characteristics Parameter Description V V for Data Retention DR CC ...

Page 6

Switching Characteristics Over the Operating Range Parameter Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW and CE ACE LOW to Data Valid ...

Page 7

C Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID Read Cycle No. 2 (OE Controlled) ADDRESS BHE/BLE t LZBE HIGH IMPEDANCE DATA OUT t LZCE ...

Page 8

Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled) ADDRESS BHE/BLE OE DATA I/O NOTE18 t HZOE Write Cycle No ADDRESS BHE/BLE ...

Page 9

Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS BHE/BLE NOTE 18 DATAI/O Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS BHE/BLE ...

Page 10

Typical DC and AC Characteristics (Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V 14.0 MoBL 12.0 10 8.0 max ( 6.0 max 4.0 2.0 ...

Page 11

Truth Table ...

Page 12

... CY62157CV25LL-70BAI CY62157CV30LL-70BAI CY62157CV33LL-70BAI 55 CY62157CV30LL-55BAI CY62157CV33LL-55BAI Package Diagram 48-Ball ( 1.2 mm) FBGA BA48F MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05014 Rev. *C © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product ...

Page 13

Document Title: CY62157CV25/30/33 MoBL™ 512K x 16 STATIC RAM Document Number: 38-05014 Issue REV. ECN NO. Date ** 106184 05/10/01 *A 107241 07/24/01 *B 109621 03/11/02 *C 114218 05/01/02 Document #: 38-05014 Rev. *C Orig. of Change HRT/MGN New Datasheet ...

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