STB80NF03L-04 STMicroelectronics, STB80NF03L-04 Datasheet - Page 5
![MOSFET Power N-Ch 30 Volt 80 Amp](/photos/26/99/269907/to-252_sml.jpg)
STB80NF03L-04
Manufacturer Part Number
STB80NF03L-04
Description
MOSFET Power N-Ch 30 Volt 80 Amp
Manufacturer
STMicroelectronics
Datasheet
1.STB80NF03L-04-1.pdf
(12 pages)
Specifications of STB80NF03L-04
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
95 ns
Minimum Operating Temperature
- 65 C
Rise Time
270 ns
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF03L-04T4
Manufacturer:
ST
Quantity:
20 000
STB80NF03L-04
Table 7.
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(1)
(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 16325 Rev 1
I
I
di/dt = 100A/µs,T
SD
SD
=80A, V
= 80A, V
Test conditions
DD
GS
= 20V
= 0
j
=150°C
Electrical characteristics
Min.
-
-
-
-
Typ.
0.15
75
4
Max
320
1.5
80
Unit
µC
ns
5/12
A
A
V
A