STB80NF03L-04 STMicroelectronics, STB80NF03L-04 Datasheet - Page 5

• Manufacturer Part Number: STB80NF03L-04
• Description: MOSFET Power N-Ch 30 Volt 80 Amp
• Manufacturer: STMicroelectronics

Specifications of STB80NF03L-04

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 95 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 270 ns
• Lead Free Status / Rohs Status: No

STB80NF03L-04
Table 7.
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(1)
(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 16325 Rev 1
I
I
di/dt = 100A/µs,T
SD
SD
=80A, V
= 80A, V
Test conditions
DD
GS
= 20V
= 0
j
=150°C
Electrical characteristics
Min.
-
-
-
-
Typ.
0.15
75
4
Max
320
1.5
80
Unit
µC
ns
5/12
A
A
V
A