STB80NF03L-04 STMicroelectronics, STB80NF03L-04 Datasheet - Page 3

• Manufacturer Part Number: STB80NF03L-04
• Description: MOSFET Power N-Ch 30 Volt 80 Amp
• Manufacturer: STMicroelectronics

Specifications of STB80NF03L-04

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 95 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 270 ns
• Lead Free Status / Rohs Status: No

STB80NF03L-04
1
Electrical ratings
Table 2.
1. Limited by package
2. Pulse width limited by safe operating area
3. I
4. Starting Tj = 25°C, I
Table 3.
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
E
I
SD
P
I
DM
V
I
V
T
D
AS
D
TOT
T
GS
T
DS
stg
(1)
(1)
(2)
j
≤ 80A, di/dt ≤ 240 A/µs, V
(4)
l
(3)
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Operating junction temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
D
= 80 A, V
DD
DD
Doc ID 16325 Rev 1
≤ V
= 50 V
C
Parameter
(BR)DSS,
= 25°C
Parameter
GS
= 0)
T
C
C
J
= 25°C
= 100°C
≤ T
JMAX
-60 to 175
Value
Value
62.5
±20
320
300
300
2.3
30
80
80
0.5
2
2
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
°C
W
°C
V
V
A
A
A
J
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