SI6544DQ-T1 Vishay, SI6544DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6544DQ-T1
• Description: MOSFET Small Signal 30V 4/3.5A
• Manufacturer: Vishay

Specifications of SI6544DQ-T1

• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A at N Channel, 3.5 A at P Channel
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6544DQ
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
0.01
–0.3
–0.6
–0.9
20
10
0.1
0.6
0.3
0.0
0
2
1
–50
10
0
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
–25
0.2
V
SD
0
Single Pulse
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
I
= 150 C
0.4
D
J
– Temperature ( C)
= 250 A
25
10
0.6
50
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
100
T
J
= 25 C
1.0
125
10
–2
Square Wave Pulse Duration (sec)
150
1.2
10
–1
0.12
0.09
0.06
0.03
40
32
24
16
8
0
0
0.01
1
On-Resistance vs. Gate-to-Source Voltage
V
3
GS
0.1
– Gate-to-Source Voltage (V)
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
– T
5
t
1
A
= P
t
2
I
D
DM
= 4.0 A
1
Z
S-56944—Rev. C, 23-Nov-98
thJA
thJA
t
t
Document Number: 70668
1
2
(t)
7
= 125 C/W
10
10
9
30
30