SI6544DQ-T1 Vishay, SI6544DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6544DQ-T1
• Description: MOSFET Small Signal 30V 4/3.5A
• Manufacturer: Vishay

Specifications of SI6544DQ-T1

• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A at N Channel, 3.5 A at P Channel
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70668
S-56944—Rev. C, 23-Nov-98
0.06
0.05
0.04
0.03
0.02
0.01
20
16
12
10
8
4
0
0
8
6
4
2
0
0
0
0
V
I
D
V
V
DS
On-Resistance vs. Drain Current
= 4.0 A
GS
GS
V
V
= 15 V
2
4
4
GS
= 4.5 V
= 10 V
DS
Q
Output Characteristics
= 10 thru 5 V
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
4
8
8
12
12
6
4 V
16
16
8
3 V
10
20
20
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
8
4
0
0
–50
0
0
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
C
= 4.0 A
rss
V
V
= 10 V
1
6
DS
GS
T
J
0
Transfer Characteristics
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
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oss
Capacitance
25
12
T
2
C
25 C
= 125 C
Vishay Siliconix
50
C
18
3
iss
75
Si6544DQ
100
–55 C
24
4
125
150
30
5
2-3