SI6544DQ-T1 Vishay, SI6544DQ-T1 Datasheet

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SI6544DQ-T1

Manufacturer Part Number
SI6544DQ-T1
Description
MOSFET Small Signal 30V 4/3.5A
Manufacturer
Vishay
Datasheet

Specifications of SI6544DQ-T1

Configuration
Dual Dual Source
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A at N Channel, 3.5 A at P Channel
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6544DQ-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI6544DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 836
Notes
a.
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
N-Channel
N-Channel
P-Channel
P-Channel
Surface Mounted on FR4 Board, t
D
G
S
S
1
1
1
1
1
2
3
4
V
DS
–30
–30
30
30
(V)
Si6544DQ
TSSOP-8
Top View
J
J
a
a
= 150 C)
= 150 C)
a
N- and P-Channel 30-V (D-S) MOSFET
Parameter
Parameter
a
a
10 sec.
0.090 @ V
0.045 @ V
0.050 @ V
0.035 @ V
8
7
6
5
r
D
S
S
G
a
DS(on)
2
2
2
2
GS
GS
GS
GS
( )
= –4.5 V
= –10 V
= 4.5 V
= 10 V
T
T
T
T
A
A
A
A
G
= 25 C
= 70 C
= 25 C
= 70 C
1
I
D
N-Channel MOSFET
(A)
4.0
3.4
3.5
2.5
D
Symbol
Symbol
S
1
1
T
R
J
V
V
I
P
P
DM
, T
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
N-Channel
1.25
30
4.0
3.2
20
20
N- or P-Channel
www.vishay.com FaxBack 408-970-5600
G
2
–55 to 150
P-Channel MOSFET
0.64
1.0
125
Vishay Siliconix
P-Channel
D
S
2
2
–1.25
–30
Si6544DQ
3.5
2.8
20
20
Unit
Unit
W
W
C/W
V
V
A
A
A
C
2-1

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SI6544DQ-T1 Summary of contents

Page 1

... Document Number: 70668 S-56944—Rev. C, 23-Nov 4 – –4 N-Channel MOSFET Symbol stg Symbol R thJA Si6544DQ Vishay Siliconix P-Channel MOSFET N-Channel P-Channel Unit 30 – 4.0 3.5 3.2 2 1.25 –1.25 1 0.64 –55 to 150 P-Channel Unit 125 C/W www.vishay.com FaxBack 408-970-5600 2-1 ...

Page 2

... Si6544DQ Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V GS(th) GS(th) Gate-Body Leakage Gate-Body Leakage I I GSS GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current I DSS DSS a a On-State Drain Current On-State Drain Current ...

Page 3

... Document Number: 70668 S-56944—Rev. C, 23-Nov- 1500 1200 900 600 300 On-Resistance vs. Junction Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 Si6544DQ Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( 4 – ...

Page 4

... Si6544DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.3 0.0 –0.3 –0.6 –0.9 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 ...

Page 5

... Document Number: 70668 S-56944—Rev. C, 23-Nov- 1500 1200 900 600 300 On-Resistance vs. Junction Temperature 1 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 –25 Si6544DQ Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( 4 100 ...

Page 6

... Si6544DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.00 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0.6 0 250 A D 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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