BF991 NXP Semiconductors, BF991 Datasheet - Page 6

Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package

BF991

Manufacturer Part Number
BF991
Description
Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF991

Application
VHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.02A
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
29@10VdB
Noise Figure (max)
2dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@10V@Gate 1/1@10V@Gate 2pF
Output Capacitance (typ)@vds
1.1@10VpF
Reverse Capacitance (typ)
0.02@10VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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NXP
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NXP Semiconductors
Legal information
Data sheet status
[1]
[2]
[3]
Definitions
Draft — The document is a draft version only. The content is still under
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modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
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information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Document status
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
Development
Qualification
Production
[3]
http://www.nxp.com
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Rev. 03 - 20 November 2007
salesaddresses@nxp.com
malfunction of an NXP Semiconductors product can reasonably be expected
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damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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N-channel dual-gate MOS-FET
BF991
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