BF909WR NXP Semiconductors, BF909WR Datasheet - Page 4

• Manufacturer Part Number: BF909WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF909WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
2010 Sep 15
R
R
V
V
V
V
V
V
I
I
I
y
C
C
C
C
F
j
DSX
G1-SS
G2-SS
SYMBOL
SYMBOL
SYMBOL
= 25 C; unless otherwise specified.
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
N-channel dual-gate MOS-FET
th j-a
th j-s
ig1-s
ig2-s
os
rs
fs

s
G1
is the temperature at the soldering point of the source lead.
connects gate 1 to V
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
amb
PARAMETER
= 25 C; V
PARAMETER
GG
= 5 V.
PARAMETER
DS
= 5 V; V
G2-S
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
= 4 V; I
V
V
V
V
V
V
V
note 1
V
V
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
j
= 25 C
D
CONDITIONS
= 15 mA; unless otherwise specified.
= V
= V
= V
= V
= 4 V; V
= V
= 4 V; V
= V
= V
4
S
DS
DS
DS
DS
DS
DS
DS
= G
CONDITIONS
= 0; I
= 0; I
= 0; I
= 0; I
= 5 V; I
= 0; V
= 0; V
Sopt
DS
DS
note 1
T
; B
s
= 5 V; I
= 5 V; R
G1-S
G2-S
S-G1
S-G2
= 91 C; note 2
G1-S
G2-S
S
D
CONDITIONS
= B
= 20 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 5 V
= 5 V
D
Sopt
G1
= 20 A
= 120 k;
36





MIN.
6
6
0.5
0.5
0.3
0.3
12


43
3.6
2.3
2.3
30
2
TYP.
MIN.
VALUE
350
210
Product specification
BF909WR
50
4.3
3
3
50
2.8
15
15
1.5
1.5
1
1.2
20
50
50
MAX.
MAX.
UNIT
K/W
K/W
V
mA
mS
pF
pF
pF
fF
dB
V
V
V
V
V
nA
nA
UNIT
UNIT