BF904 NXP Semiconductors, BF904 Datasheet - Page 2

Enhancement type Field-Effect Transistor in a plastic SOT143B package

BF904

Manufacturer Part Number
BF904
Description
Enhancement type Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF904

Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
0.03A
Drain Source Voltage (max)
7V
Noise Figure (max)
2.8dB
Frequency (max)
1GHz
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.2@5V@Gate 1/1.5@5V@Gate 2pF
Output Capacitance (typ)@vds
1.3@5VpF
Reverse Capacitance (typ)
0.025@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF904
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BF904
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Part Number:
BF904A
Manufacturer:
NXP
Quantity:
30 000
Part Number:
BF904AR
Manufacturer:
NXP
Quantity:
81 000
Part Number:
BF904AR-TL
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BF904AWR
Manufacturer:
NXP
Quantity:
30 000
Part Number:
BF904R
Manufacturer:
NXP
Quantity:
30 000
Part Number:
BF904R
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BF904R-TL
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BF904R/M06
Manufacturer:
PHI
Quantity:
20 000
NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
QUICK REFERENCE DATA
handbook, halfpage
V
I
P
T
C
C
F
D
y
j
Specially designed for use at 5 V supply voltage
Short channel transistor with high transfer admittance to
input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
such as television tuners and professional
communications equipment.
DS
tot
ig1-s
rs
N-channel dual gate MOS-FETs
VHF and UHF applications with 3 to 7 V supply voltage
SYMBOL
fs
Top view
BF904 marking code: %MC.
Fig.1 Simplified outline (SOT143B) and symbol.
4
1
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
3
2
MAM124
PARAMETER
g 2
g
1
d
Rev. 06 - 13 November 2007
s,b
f = 1 MHz
f = 800 MHz
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
handbook, halfpage
CONDITIONS
This product is supplied in anti-static packing to
prevent damage caused by electrostatic discharge
during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A
and SNW-FQ-302B.
Top view
BF904R marking code: %MD.
PIN
Fig.2 Simplified outline (SOT143R) and symbol.
1
2
3
4
3
2
SYMBOL
1
s, b
g
g
d
4
2
1
22
MAM125 - 1
MIN.
CAUTION
source
drain
gate 2
gate 1
25
2.2
25
2
BF904; BF904R
TYP.
DESCRIPTION
g
g
Product specification
2
1
7
30
200
150
30
2.6
35
MAX.
d
2 of 14
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b

Related parts for BF904