933978490112 NXP Semiconductors, 933978490112 Datasheet - Page 10

933978490112

Manufacturer Part Number
933978490112
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 933978490112

Application
VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
25A
Drain Source Voltage (max)
65V
Output Power (max)
300W
Power Gain (typ)@vds
15@28VdB
Frequency (max)
225MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
7.5S
Drain Source Resistance (max)
150@10Vmohm
Input Capacitance (typ)@vds
495@32VpF
Output Capacitance (typ)@vds
340@32VpF
Reverse Capacitance (typ)
40@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW Class-AB
Number Of Elements
2
Power Dissipation (max)
500000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Philips Semiconductors
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 to L11, L16 to L22 and L24 are on a double copper-clad printed circuit board with glass
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 to L21 to avoid overheating by large
2003 Sep 26
R7, R8
R9
IC1
VHF push-pull power MOS transistor
COMPONENT
microfibre PTFE dielectric (
RF currents.
metal film resistor
metal film resistor
voltage regulator 78L05
r
= 2.2); thickness
DESCRIPTION
1
16
inch; thickness of copper sheet 2
10
1 W, 5%, 10
1 W, 3.16 k
VALUE
DIMENSIONS
35 m.
Product specification
CATALOGUE NO.
BLF368

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