933978490112 NXP Semiconductors, 933978490112 Datasheet

933978490112

Manufacturer Part Number
933978490112
Description
Manufacturer
NXP Semiconductors
Datasheet
1.933978490112.pdf (18 pages)

Specifications of 933978490112

Application
VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
25A
Drain Source Voltage (max)
65V
Output Power (max)
300W
Power Gain (typ)@vds
15@28VdB
Frequency (max)
225MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
7.5S
Drain Source Resistance (max)
150@10Vmohm
Input Capacitance (typ)@vds
495@32VpF
Output Capacitance (typ)@vds
340@32VpF
Reverse Capacitance (typ)
40@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW Class-AB
Number Of Elements
2
Power Dissipation (max)
500000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Product specification
Supersedes data of 1998 Jul 29
DATA SHEET
BLF368
VHF push-pull power MOS
transistor
M3D091
DISCRETE SEMICONDUCTORS
2003 Sep 26

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933978490112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jul 29 2003 Sep 26 ...

Page 2

Philips Semiconductors VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF ...

Page 3

Philips Semiconductors VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor section unless otherwise specified V drain-source voltage DS V gate-source voltage GS I drain current (DC) D ...

Page 4

Philips Semiconductors VHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETERS Per transistor section V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage ...

Page 5

Philips Semiconductors VHF push-pull power MOS transistor 0 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per ...

Page 6

Philips Semiconductors VHF push-pull power MOS transistor 600 handbook, halfpage C rs (pF) 400 200 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. ...

Page 7

Philips Semiconductors VHF push-pull power MOS transistor 20 handbook, halfpage G p (dB 100 200 300 Class-AB operation 1.34 j0.34 (per section ...

Page 8

Acrobat reader. white to force landscape pages to be ... input IC1 R9 ...

Page 9

Philips Semiconductors VHF push-pull power MOS transistor List of components class-AB test circuit (see Figs 12 and 13) COMPONENT C1, C2 multilayer ceramic chip capacitor; note 1 C3 film dielectric trimmer C4 multilayer ceramic chip capacitor; note 1 C5 film ...

Page 10

Philips Semiconductors VHF push-pull power MOS transistor COMPONENT R7, R8 metal film resistor R9 metal film resistor IC1 voltage regulator 78L05 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines ...

Page 11

Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth 119 V DD1 L1 L2 hollow rivets L3 The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve ...

Page 12

Philips Semiconductors VHF push-pull power MOS transistor 2 handbook, halfpage 150 200 Class-AB operation 536 (per section); ...

Page 13

Philips Semiconductors VHF push-pull power MOS transistor BLF368 scattering parameters 250 mA; note (MHz 0.86 159.2 10 0.86 168.9 20 0.86 173.4 30 0.86 ...

Page 14

Philips Semiconductors VHF push-pull power MOS transistor BLF368 scattering parameters 250 mA; note (MHz 0.86 157.9 10 0.86 168.3 20 0.86 173.1 30 0.86 ...

Page 15

Philips Semiconductors VHF push-pull power MOS transistor BLF368 scattering parameters 250 mA; note (MHz 0.86 156.9 10 0.86 167.8 20 0.86 172.9 30 0.86 ...

Page 16

Philips Semiconductors VHF push-pull power MOS transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 5.85 5.77 ...

Page 17

Philips Semiconductors VHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 18

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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