TDK5100GEG Infineon Technologies, TDK5100GEG Datasheet - Page 27
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TDK5100GEG
Manufacturer Part Number
TDK5100GEG
Description
Manufacturer
Infineon Technologies
Datasheet
1.TDK5100GEG.pdf
(40 pages)
Specifications of TDK5100GEG
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Product Depth (mm)
4.4mm
Operating Supply Voltage (min)
2.1V
Operating Supply Voltage (typ)
2.5/3.3V
Lead Free Status / Rohs Status
Compliant
Wireless Components
Example for the FSK-Mode:
FSK modulation is achieved by switching the load capacitance of the crystal as
shown below.
The frequency deviation of the crystal oscillator is multiplied with the divider
factor N of the Phase Locked Loop to the output of the power amplifier. In case
of small frequency deviations (up to +/- 1000 ppm), the two desired load
capacitances can be calculated with the formula below.
Because of the inductive part of the TDK 5100, these values must be corrected
by Formula 1). The value of Cv± can be calculated.
C
C
f:
N:
df:
:
L
0
:
:
division ratio of the PLL
peak frequency deviation
crystal load capacitance for nominal frequency
shunt capacitance of the crystal
frequency
CL
-R
f: angular frequency
3 - 8
FSKDTA
Csw
CL
L
IC
1
#
C
N
0
*
N
FSKOUT
COSC
f
f
*
1
f
1 (
f
1
1 (
f, CL Cv1
( 2
C
( 2
0
C
C
1
0
C
CL
1
Specification, October 2002
CL
)
)
)
)
Cv2
Applications
TDK 5100