AM29F200BT-55EC AMD (ADVANCED MICRO DEVICES), AM29F200BT-55EC Datasheet - Page 11

• Manufacturer Part Number: AM29F200BT-55EC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29F200BT-55EC

• Cell Type: NOR
• Density: 2Mb
• Access Time (max): 55ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 18/17Bit
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8/16Bit
• Number Of Words: 256K/128K
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

An erase operation can erase one sector, multiple sec-
tors, or the entire device. The Sector Address Tables
indicate the address space that each sector occupies.
A “sector address” consists of the address bits required
to uniquely select a sector. See the “Command Defini-
tions” section for details on erasing a sector or the
entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the
internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings apply
in this mode. Refer to the “Autoselect Mode” and
“Autoselect Command Sequence” sections for more
information.
I
active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I
read specifications apply. Refer to “Write Operation
Status” for more information, and to each AC Charac-
teristics section in the appropriate data sheet for timing
diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when CE#
and RESET# pins are both held at V
that this is a more restricted voltage range than V
The device enters the TTL standby mode when CE#
and RESET# pins are both held at V
requires standard access time (t
when the device is in either of these standby modes,
before it is ready to read data.
The device also enters the standby mode when the
RESET# pin is driven low. Refer to the next section,
“RESET#: Hardware Reset Pin”.
August 3, 2009 21526D6
CC2
in the DC Characteristics table represents the
CE
) for read access
CC
IH
± 0.5 V. (Note
. The device
D A T A
Am29F200B
IH
CC
.)
S H E E T
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
In the DC Characteristics tables, I
standby current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the system
drives the RESET# pin low for at least a period of t
the device immediately terminates any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state
machine to reading array data. The operation that was
interrupted should be reinitiated once the device is
ready to accept another command sequence, to
ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
the TTL standby mode; if RESET# is held at V
0.5 V, the device enters the CMOS standby mode.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t
rithms). The system can read data t
RESET# pin returns to V
Refer to the AC Characteristics tables for RESET#
parameters and timing diagram.
Output Disable Mode
When the OE# input is at V
disabled. The output pins are placed in the high imped-
ance state.
READY
(during Embedded Algorithms). The
READY
(not during Embedded Algo-
IH
.
IH
, output from the device is
IL
CC3
, the device enters
represents the
RH
after the
SS
RP
9
±
,