AM29F200BT-55EC AMD (ADVANCED MICRO DEVICES), AM29F200BT-55EC Datasheet

AM29F200BT-55EC

Manufacturer Part Number
AM29F200BT-55EC
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of AM29F200BT-55EC

Cell Type
NOR
Density
2Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Top
Address Bus
18/17Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
256K/128K
Supply Current
50mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29F200BT-55EC
Manufacturer:
AMD
Quantity:
4 420
Part Number:
AM29F200BT-55EC
Manufacturer:
AMD
Quantity:
20 000
Am29F200B
Data Sheet
Am29F200B Cover Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21526
Revision D
Amendment 6
Issue Date August 3, 2009

Related parts for AM29F200BT-55EC

AM29F200BT-55EC Summary of contents

Page 1

Am29F200B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made ...

Page 2

This page left intentionally blank Am29F200B 21526_D6 August 3, 2009 ...

Page 3

... DATA SHEET Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F200A device ■ ...

Page 4

... The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. ...

Page 5

TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . ...

Page 6

PRODUCT SELECTOR GUIDE Family Part Number = 5.0 V ± Speed Option = 5.0 V ± 10 Max access time ACC Max CE# access time Max OE# access ...

Page 7

CONNECTION DIAGRAMS This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for more information. NC RY/BY CE OE# DQ0 DQ8 DQ1 DQ9 ...

Page 8

CONNECTION DIAGRAMS This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for more information. 1 A15 2 A14 3 A13 A12 4 5 A11 6 A10 ...

Page 9

... Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory 5.0 Volt-only Program and Erase Valid Combinations EC, EI, SC, SI AM29F200BT-45, AM29F200BB-45 ED, EF, SD, SF AM29F200BT-50, AM29F200BB-50 AM29F200BT-55, AM29F200BB-55 AM29F200BT-70, EC, EI, EE, ED, EF, EK AM29F200BB-70 SC, SI, SE, SD, SF, SK AM29F200BT-90, AM29F200BB-90 AM29F200BT-120, AM29F200BB-120 August 3, 2009 21526D6 TEMPERATURE RANGE ° ° + Commercial ° ...

Page 10

DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory loca- tion. The register is composed of ...

Page 11

... TTL standby mode; if RESET# is held at V 0.5 V, the device enters the CMOS standby mode. The RESET# pin may be tied to the system reset cir- cuitry. A system reset would thus also reset the Flash CC memory, enabling the system to read the boot-up firm- ware from the Flash memory ...

Page 12

Table 2. Am29F200T Top Boot Block Sector Address Table Sector A16 A15 A14 SA0 SA1 SA2 SA3 SA4 SA5 SA6 1 1 ...

Page 13

... The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” for details. ...

Page 14

V power-down transitions, or from system noise. Low V Write Inhibit CC When V is less than V , the device does not CC LKO accept any write ...

Page 15

Method) table, which is intended for PROM program- mers and requires V on address bit A9. ID The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, ...

Page 16

The system can determine the status of the erase oper- ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading ...

Page 17

The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ...

Page 18

Command Definitions Table 5. Am29F200B Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte ...

Page 19

WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsec- tions describe the functions of these bits. DQ7, RY/BY#, and DQ6 ...

Page 20

RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

Page 21

The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor ...

Page 22

Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate ...

Page 23

ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied ...

Page 24

DC CHARACTERISTICS TTL/NMOS Compatible Parameter Symbol Parameter Description I Input Load Current A9 RESET Input Load I LIT Current I Output Leakage Current Active Read Current (Notes CC1 CC ...

Page 25

DC CHARACTERISTICS (Continued) CMOS Compatible Parameter Symbol Parameter Description I Input Load Current A9 RESET Input I LIT Load Current I Output Leakage Current LO V Active Read Current CC I CC1 (Notes 1, 2) ...

Page 26

TEST CONDITIONS Device Under Test C L 6.2 kΩ Note: Diodes are IN3064 or equivalents. Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted Table ...

Page 27

AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV CE Output Enable to Output Delay t ...

Page 28

AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...

Page 29

AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

Page 30

AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...

Page 31

AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device in word ...

Page 32

AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE Data RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid Address for ...

Page 33

AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

Page 34

AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-sus- pended sector. Temporary ...

Page 35

AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...

Page 36

AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data Sector Address, DQ7# = Complement ...

Page 37

ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time (Note 3) Notes: 1. Typical program and erase times assume the following conditions: 25×C, 5 programming typicals assume ...

Page 38

PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package Am29F200B Dwg rev AC; 10/99 21526D6 August 3, 2009 ...

Page 39

PHYSICAL DIMENSIONS TS 048—48-Pin Standard Thin Small Outline Package August 3, 2009 21526D6 Am29F200B Dwg rev AA; 10/99 37 ...

Page 40

REVISION SUMMARY Revision A (July 1998) Global Made formatting and layout consistent with other data sheets. Used updated common tables and diagrams Revision B (January 1999) Distinctive Characteristics Added bullet for 20-year data retention at 125°C Ordering Information Optional Processing: ...

Page 41

Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated ...

Related keywords