TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 25

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

command
(6)
(7)
RY
/
WE
RE
CE
BY
Addressing for program operation
the block to MSB (most significant bit) page of the block. Random page address programming is prohibited.
Status Read during a Read operation
mode.
to Read mode. In this case, data output starts automatically from address N and address input is unnecessary
From the LSB page to MSB page
DATA IN: Data (1)
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of
The device status can be read out by inputting the Status Read command “70H” in Read mode.
Once the device has been set to Status Read mode by a “70H” command, the device will not return to Read
Therefore, a Status Read during a Read operation is prohibited.
However, when the Read command “00H” is input during [A], Status mode is reset and the device returns
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Page 0
Page 1
Page 2
00
Address N
Data (32)
Data register
(16)
(32)
(1)
(2)
(3)
Figure 17. page programming within a block
Figure 18.
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
command input
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Status Read
Page 0
Page 1
Page 2
70
Data (32)
Status Read
Data register
TC58DVM82A1FT00
(16)
(32)
(2)
(3)
(1)
[A]
00
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Status output