TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 2

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE *(Ta =25°C, f= 1 MHz)
RY
SYMBOL
V
V
V
P
T
T
T
C
C
*
CLE
I/O1
ALE
I/O8
/
WE
WP
solder
stg
opr
CC
IN
I/O
D
RE
IN
OUT
CE
BY
to
SYMB0L
This parameter is periodically sampled and is not tested for every device.
Power Supply Voltage
Input Voltage for Control pins
Input/Output Voltage for I/O pins
Power Dissipation
Soldering Temperature(10s)
Storage Temperature
Operating Temperature
Input
Output
I/O Control circuit
Logic control
RY
RATING
/
BY
PARAMETER
Command register
Address register
Status register
Control
− 0.6 V~V
HV generator
CONDITION
V
V
CC
IN
OUT
− 0.6~4.6
− 0.6~4.6
− 55~150
VALUE
+ 0.3 V ( ≦ 4.6 V)
0~70
= 0 V
260
0.3
= 0 V
MIN


TC58DVM82A1FT00
Memory cell array
Column decoder
Column buffer
Data register
2003-03-25 2/34
Sense amp
MAX
10
10
V
CC
V
SS
UNIT
unit
°C
pF
pF
°C
°C
W
V
V