TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 21

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TC58DVM82A1FT00

Manufacturer Part Number
TC58DVM82A1FT00
Description
Manufacturer
Toshiba
Datasheet

Specifications of TC58DVM82A1FT00

Cell Type
NAND
Density
256Mb
Access Time (max)
35ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
25b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
32M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC58DVM82A1FT00
Manufacturer:
TOSHIBA
Quantity:
3 340
Part Number:
TC58DVM82A1FT00
Manufacturer:
TOSHIBA
Quantity:
3 340
Auto Page Program
Auto Block Erase
the address and data have been input. The sequence of command, address and data input is shown below.
(Refer to the detailed timing chart.)
which follows the Erase Setup command “60H”. This two-cycle process for Erase operations acts as an ertra layer
of protection from aceidental erasure of data due to external noise. The device automatically executes the Erase
and Verify operations.
The device carries out an Automatic Page Program operation when it receives a “10H” Program command after
Data input
The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command “D0H”
command
RY
RY
Data input
/
/
80
BY
BY
Selected
Figure 7. Auto Page Program operation
page
Address
60
Program
input
Block Address
input: 2 cycles
Data input
0 to 527
Erase Start
Reading & verification
command
command
Program
D0
10
page on the rising edge of
After programming, the programmed data is transferred back to the
register to be automatically verified by the device. If the programming
does not succeed, the Program/Verify operation is repeated by the device
until success is achieved or until the maximum loop number set in the
device is reached.
The data is transferred (programmed) from the register to the selected
Busy
completion of the operation.
RY
Status Read
Status Read
command
command
/
WE
BY
70
70
automatically returns to Ready after
following input of the “10H” command.
TC58DVM82A1FT00
I/O
I/O
2003-03-25 21/34
Fail
Fail
Pass
Pass

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