GS8342T36AE-250 GSI TECHNOLOGY, GS8342T36AE-250 Datasheet - Page 12

• Manufacturer Part Number: GS8342T36AE-250
• Manufacturer: GSI TECHNOLOGY

Specifications of GS8342T36AE-250

• Density: 36Mb
• Access Time (max): 0.45ns
• Sync/async: Synchronous
• Architecture: DDR
• Clock Freq (max): 250MHz
• Operating Supply Voltage (typ): 1.8V
• Address Bus: 20b
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 650mA
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.9V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 165
• Word Size: 36b
• Number Of Words: 1M
• Lead Free Status / Rohs Status: Not Compliant

Common I/O SigmaCIO DDR-II B2 SRAM Truth Table
B2 Byte Write Clock Truth Table
*Assuming stable conditions, the RAM can achieve optimum impedance within 1024 cycles.
Rev: 1.05 12/2007
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note: Q is controlled by K clocks if C clocks are not used.
Notes:
1.
2.
(t
BW
K
“1” = input “high”; “0” = input “low”; “X” = input “don’t care”; “T” = input “true”; “F” = input “false”.
If one or more BWn = 0, then BW = “T”, else BW = “F”.
n+1
T
T
F
F
K
↑
↑
↑
↑
)
n
(t
BW
K
n+2
T
F
T
F
↑
)
LD
1
0
0
Dx stored if BWn = 0 in 2nd data transfer only
Dx stored if BWn = 0 in 1st data transfer only
Dx stored if BWn = 0 in both data transfers
R/W
X
0
1
No Dx stored in either data transfer
Current Operation
12/37
Write Abort
Write
Write
Write
K
(t
D@K
Q@K
n
A + 0
↑
Hi-Z
C
)
or
n+1
n+1
n+1
GS8342T08/09/18/36AE-333/300/250/200/167
DQ
D@K
Q@K
A + 1
Hi-Z
C
or
n+2
n+1
n+2
(t
K
n+1
D1
D1
D
X
X
© 2006, GSI Technology
↑
Operation
Deselect
)
Write
Read
(t
K
n+2
D2
D2
D
X
X
↑
)