BFT93 NXP Semiconductors, BFT93 Datasheet - Page 4

• Manufacturer Part Number: BFT93
• Manufacturer: NXP Semiconductors

Specifications of BFT93

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 20
• Power Dissipation: 300mW
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. d
November 1992
I
h
f
C
C
C
G
F
V
SYMBOL
j
CBO
T
FE
o
= 25 C unless otherwise specified.
c
e
re
PNP 5 GHz wideband transistor
UM
V
V
V
measured at f
G
im
p
q
r
UM
UM
= V
= V
= V
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
=
o
o
o
at d
10 log
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
6 dB; f
6 dB; f
im
(p q r
= 60 dB; f
------------------------------------------------------------- - dB.
r
q
= 505.25 MHz;
1
PARAMETER
= 503.25 MHz;
–
) = 493.25 MHz.
S
11
S
2
p
21
= 495.25 MHz;
1
C
2
–
= 30 mA; V
S
22
2
I
I
I
f = 500 MHz
I
I
I
I
f = 500 MHz; T
I
f = 500 MHz; T
see Fig.2 and note 2
E
C
C
E
c
C
C
C
CE
= i
= 0; V
= i
= 30 mA; V
= 30 mA; V
= 2 mA; V
= 30 mA; V
= 10 mA; V
c
e
= 5 V; R
= 0; V
= 0; V
CB
CONDITIONS
= 5 V
EB
CB
4
CE
12
L
= 0.5 V; f = 1 MHz
amb
amb
CE
CE
CE
CE
= 10 V; f = 1 MHz
= 75 ;
is zero and
= 5 V; f = 1 MHz
= 5 V
= 5 V;
= 5 V;
= 5 V;
= 25 C
= 25 C
20
MIN.
50
5
0.95
1.8
1
16.5
2.4
300
TYP.
Product specification
MAX.
50
BFT93
nA
GHz
pF
pF
pF
dB
dB
mV
UNIT