BFT93 NXP Semiconductors, BFT93 Datasheet - Page 2

• Manufacturer Part Number: BFT93
• Manufacturer: NXP Semiconductors

Specifications of BFT93

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 20
• Power Dissipation: 300mW
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and
BFR93A.
QUICK REFERENCE DATA
Note
1. T
November 1992
V
V
I
P
f
C
G
F
V
c
T
CBO
CEO
tot
o
re
PNP 5 GHz wideband transistor
UM
SYMBOL
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain I
noise figure
output voltage
PARAMETER
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
T
I
T
I
T
d
V
f
C
C
C
C
(p q r)
im
base
emitter
collector
j
amb
amb
CE
= 25 C
= 30 mA; V
= 2 mA; V
= 30 mA; V
= 10 mA; V
= 60 dB; I
Code: X1p
= 5 V; R
= 25 C
= 25 C
= 493.25 MHz
s
DESCRIPTION
= 95 C; note 1
2
CE
L
C
CONDITIONS
CE
CE
CE
= 75 ;
= 30 mA;
= 5 V; f = 1 MHz
= 5 V; f = 500 MHz;
= 5 V; f = 500 MHz;
= 5 V; f = 500 MHz;
fpage
Top view
1
Fig.1 SOT23.
5
1
16.5
2.4
300
Product specification
TYP.
3
MSB003
300
MAX.
15
12
35
BFT93
2
V
V
mA
mW
GHz
pF
dB
dB
mV
UNIT