S29GL128N11FAI020 Spansion Inc., S29GL128N11FAI020 Datasheet - Page 92

• Manufacturer Part Number: S29GL128N11FAI020
• Manufacturer: Spansion Inc.

Specifications of S29GL128N11FAI020

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: Fortified BGA
• Program/erase Volt (typ): 3/11.5 to 12.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 90mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Not Compliant

21.10 Revision A9 (June 15, 2005)
21.11 Revision B0 (April 22, 2006)
92
DC Characteristics table
Added V
Changed maximum specifications for I
Tables Memory Array Commands (x16) to Sector Protection Commands (x8), Memory Array
and Sector Protection (x8 & x16)
Re-formatted command definition tables for easier reference.
Advance Information on S9GL-P AC Characteristics
Changed speed specifications and units of measure for t
t
Ordering Information table
Added note to temperature range.
Valid Combinations table
Replaced table.
DC Characteristics table
Replaced V
Connection Diagrams
Modified 56-Pin Standard TSOP. Modified 64-ball Fortified BGA.
Advance Information on S9GL-P AC Characteristics
Added second table.
Global
Changed document status to Full Production.
Ordering Information
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combinations table.
S29GL128N Sector Address Table
Corrected bit range values for A22–A16.
Persistent Protection Bit (PPB)
Corrected typo in second sentence, second paragraph.
Secured Silicon Sector Flash Memory Region
Deleted note at end of second paragraph.
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory
Modified 1st bullet text.
Write Protect (WP#)
Modified third paragraph.
Device Geometry Definition table
Changed 1st x8 address for Erase Block Region 2.
Word Program Command Sequence
Modified fourth paragraph.
READY
from maximum to minimum.
IO
= V
IL
lines for I
CC
test condition to I
CC4
, I
CC5
, I
CC6
CC4
.
ACC
, I
CC5
S29GL-N
(on ACC pin) and I
, I
D a t a
CC6
specifications. Corrected unit of measure on ICC4 to µA.
S h e e t
READY
CC3
, t
RP
to 90 mA.
, t
RH
, and t
RPD
S29GL-N_00_B8 May 30, 2008
. Changed specifications on