S29GL128N11FAI020 Spansion Inc., S29GL128N11FAI020 Datasheet - Page 3

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S29GL128N11FAI020

Manufacturer Part Number
S29GL128N11FAI020
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29GL128N11FAI020

Cell Type
NOR
Density
128Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
Fortified BGA
Program/erase Volt (typ)
3/11.5 to 12.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
90mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / Rohs Status
Not Compliant
This product family has been retired and is not recommended for designs. For new and current designs, S29GL128P,
S29GL256P, and S29GL512P supersede S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-
recommended migration paths. Please refer to the S29GL-P Family data sheet for specifications and ordering information.
Distinctive Characteristics
Architectural Advantages
Performance Characteristics
S29GL-N
MirrorBit
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit Process Technology
Data Sheet
Single Power Supply Operation
– 3 volt read, erase, and program operations
Enhanced VersatileI/O™ Control
– All input levels (address, control, and DQ input levels) and outputs
Manufactured on 110 nm MirrorBit Process Technology
Secured Silicon Sector Region
– 128-word/256-byte sector for permanent, secure identification
– May be programmed and locked at the factory or by the customer
Flexible Sector Architecture
– S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors
– S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors
– S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte)
Compatibility with JEDEC Standards
– Provides pinout and software compatibility for single-power supply
100,000 Erase Cycles per sector typical
20-year Data Retention typical
High Performance
– 90 ns access time (S29GL128N, S29GL256N)
– 100 ns (S29GL512N)
– 8-word/16-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer reduces overall programming time for
Low Power Consumption (typical values at 3.0 V, 5 MHz)
– 25 mA typical active read current;
– 50 mA typical erase/program current
– 1 µA typical standby mode current
are determined by voltage on V
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
sectors
flash, and superior inadvertent write protection
multiple-word updates
®
Publication Number S29GL-N_00
Flash Family
IO
input. V
IO
range is 1.65 to V
Revision B
CC
Software & Hardware Features
Amendment 8
Package Options
– 56-pin TSOP
– 64-ball Fortified BGA
Software Features
– Program Suspend and Resume: read other sectors before
– Erase Suspend and Resume: read/program other sectors before an
– Data# polling and toggle bits provide status
– Unlock Bypass Program command reduces overall multiple-word
– CFI (Common Flash Interface) compliant: allows host system to
Hardware Features
– Advanced Sector Protection
– WP#/ACC input accelerates programming time (when high voltage
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
Density
512 Mb
256 Mb
128 Mb
programming operation is completed
erase operation is completed
programming time
identify and accommodate multiple flash devices
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings
completion
Product Availability Table
Init. Access
110 ns
100 ns
110 ns
100 ns
110 ns
100 ns
90 ns
90 ns
Issue Date May 30, 2008
Regulated
Regulated
V
Full
Full
Full
Full
Full
Full
CC
Availability
Now
Now
Now
Now
Now
Now
Now
Now

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