BSS83P Infineon Technologies, BSS83P Datasheet - Page 7

• Manufacturer Part Number: BSS83P
• Manufacturer: Infineon Technologies
• Type: Small Signalr

Specifications of BSS83P

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 330mA
• Power Dissipation: 360mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Package: SOT-23
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 2,000.0 mOhm
• Rds (on) (max) (@4.5v): 3,000.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / Rohs Status: Compliant

Drain-source on-state resistance
R
parameter : I
Typ. capacitances
C = f ( V
parameter: V
Rev. 1.2
DS(on)
W
pF
10
10
10
10
5.5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60
3
2
1
0
0
BSS 83 P
DS
= f ( T
)
-5
-20
D
GS
j
)
= -0.33 A, V
-10
=0V, f =1 MHz
20
98%
typ
-15
60
-20
GS
100
= -10 V
-25
°C
V
T
V
C
C
C
j
DS
iss
oss
rss
180
-35
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
V
V
V
V
A
0.0
0.0
0.0
0.0
-1
-2
-60
-60
-60
-60
0.0
1
0
BSS 83 P
= f ( T j )
SD
-0.4
)
-20
-20
-20
-20
GS
-0.8
p
= V
= 80 µs
20
20
20
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
98%
typ
2%
-1.6
D
60
60
60
60
= -80 µA
-2.0
100
100
100
100
2007-03-02
BSS 83 P
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
160
160
160
160