BSS83P Infineon Technologies, BSS83P Datasheet

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BSS83P

Manufacturer Part Number
BSS83P
Description
Manufacturer
Infineon Technologies
Type
Small Signalr
Datasheet

Specifications of BSS83P

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
2Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Continuous Drain Current
330mA
Power Dissipation
360mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Package
SOT-23
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
2,000.0 mOhm
Rds (on) (max) (@4.5v)
3,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / Rohs Status
Compliant

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Rev. 1.2
SIPMOS
Features
·
·
·
·
·
Type
BSS 83 P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
A
A
A
jmax
A
P-Channel
Avalanche rated
Logic Level
d v /d t rated
= -0.33 A, V
= -0.33 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 150 °C
Small-Signal-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
Package
PG-SOT-23
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
Pb-free
Yes
W
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
Marking
YAs
stg
Pin 1
-55...+150
55/150/56
G
V
R
I
Value
0.036
-0.33
-0.27
-1.32
D
0.36
±
DS
9.5
DS(on)
6
20
3
PIN 2
S
2007-03-02
-0.33
BSS 83 P
-60
2
1
PIN 3
Unit
A
mJ
kV/µs
V
W
°C
VPS05161
D
V
W
A
2

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BSS83P Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · rated Type Package BSS 83 P PG-SOT-23 Maximum Ratings, Parameter Continuous drain current ° ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point ( Pin 3 ) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...

Page 4

Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -0. Gate to drain charge -0. Gate charge total V = ...

Page 5

Power Dissipation tot A BSS 83 P 0.38 W 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area ...

Page 6

Typ. output characteristic =25° parameter µs p BSS 83 P -0. tot -0.60 -0.50 ...

Page 7

Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 83 P 5.5 W 4.5 4.0 3.5 3.0 98% 2.5 2.0 typ 1.5 1.0 0.5 0.0 -60 - ...

Page 8

Avalanche energy para -0. - 105 Drain-source ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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