PHP225 NXP Semiconductors, PHP225 Datasheet - Page 7

• Manufacturer Part Number: PHP225
• Description: Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHP225

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PHP225
Product data sheet
Fig 8.
Fig 10. Temperature coefficient of drain-source
R
(mΩ)
DSon
k
10
10
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
4
3
2
of drain current; typical values
on-state resistance; P-channel
-V
(1) I
(2) I
(3) I
(4) I
(5) I
Drain-source on-state resistance as a function
Typical R
(1) I
(2) I
−50
0
DS
D
D
D
D
D
D
D
≥ -I
= -4.5 A.
= -0.1 A.
= -0.5 A.
= -1 A.
= -2.3 A.
= -1 A; V
= -0.5 A; V
−2
D
(1)
DSon
0
x R
(2)(3)
DSon
at:
(4) (5)
GS
−4
GS
= -10 V.
; T
= -4.5 V.
50
j
= 25 °C.
−6
100
−8
All information provided in this document is subject to legal disclaimers.
T
V
j
GS
mda165
mbe146
(°C)
(1)
(2)
(V)
−10
150
Rev. 04 — 17 March 2011
Fig 9.
Fig 11. Source current as a function of source-drain
k
(A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
−6
−4
−2
S
0
threshold voltage
voltage
Typical V
Temperature coefficient of gate-source
−50
0
Dual P-channel intermediate level FET
GSth
−0.5
0
at I
D
= 1 mA; V
−1
50
(1)
(2)
DS
100
−1.5
= V
© NXP B.V. 2011. All rights reserved.
PHP225
(3)
V
T
j
SD
GS
(°C)
mbe156
mbe138
(V)
= V
150
−2
GSth
.
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