BAS56 NXP Semiconductors, BAS56 Datasheet - Page 3

• Manufacturer Part Number: BAS56
• Description: The BAS56 consists of two high-speedswitching diodes fabricated inplanar technology, and encapsulatedin the small rectangular plastic SMDSOT143 package
• Manufacturer: NXP Semiconductors

Specifications of BAS56

• Rectifier Type: Switching Diode
• Configuration: Dual Parallel
• Peak Rep Rev Volt: 120V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 0.1uA
• Peak Non-repetitive Surge Current (max): 9A
• Forward Voltage: 1V
• Operating Temp Range: -65C to 150C
• Package Type: SOT-143B
• Rev Recov Time: 6ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS56
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Table 6.
[1]
Symbol
V
V
I
I
I
P
T
T
Symbol
R
R
F
FRM
FSM
j
stg
RRM
R
tot
th(j-a)
th(j-t)
Series connection.
Device mounted on an FR4 PCB.
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 PCB.
j
= 25 °C prior to surge.
Limiting values
Thermal characteristics
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 June 2010
Conditions
square wave
T
Conditions
in free air
amb
t
t
t
p
p
p
= 1 μs
= 100 μs
= 10 ms
= 25 °C
[2][3]
[2][4]
[1]
[1]
[3]
[4]
[5]
[2]
[1]
High-speed double diode
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
Min
-
-
Typ
-
-
© NXP B.V. 2010. All rights reserved.
Max
60
120
60
120
200
150
600
430
9
3
1.7
250
150
+150
BAS56
Max
500
360
Unit
V
V
V
V
mA
mA
mA
mA
A
A
A
mW
°C
°C
Unit
K/W
K/W
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