M48T18-100MH1 STMicroelectronics, M48T18-100MH1 Datasheet - Page 18

RAM Miscellaneous 8KX8 TIMEKEEP 100NS

M48T18-100MH1

Manufacturer Part Number
M48T18-100MH1
Description
RAM Miscellaneous 8KX8 TIMEKEEP 100NS
Manufacturer
STMicroelectronics
Datasheet

Specifications of M48T18-100MH1

Bus Type
Parallel
Date Format
DW:DM:M:Y
Time Format
HH:MM:SS
User Ram
8KB
Operating Supply Voltage (typ)
5V
Package Type
SOH
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temperature Classification
Commercial
Operating Temperature (max)
70C
Operating Temperature (min)
0C
Pin Count
28
Mounting
Surface Mount
Lead Free Status / Rohs Status
Not Compliant

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Clock operations
3.5
18/31
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
10) is recommended in order to provide the needed filtering.
CC
to V
SS
V CC
Doc ID 2411 Rev 10
(cathode connected to V
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
DEVICE
CC
CC
, anode to V
bus. The energy stored in the
M48T08, M48T08Y, M48T18
SS
SS
by as much as
). Schottky diode
AI02169

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