AM29LV001BB-90EC Spansion Inc., AM29LV001BB-90EC Datasheet - Page 9

• Manufacturer Part Number: AM29LV001BB-90EC
• Manufacturer: Spansion Inc.

Specifications of AM29LV001BB-90EC

• Cell Type: NOR
• Density: 1Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 17b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128K
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 32
• Lead Free Status / Rohs Status: Not Compliant

DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
Legend:
L = Logic Low = V
Notes:
1. Addresses are A16–A0.
2. The in-system method of sector protection/unprotection is available. Sector protection/unprotection can be implemented by
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
control and selects the device. OE# is the output
control and gates array data to the output pins. WE#
should remain at V
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No
command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert
valid addresses on the device address inputs produce
valid data on the device data outputs. The device
remains enabled for read access until the command
register contents are altered.
See
mation. Refer to the AC
table for timing specifications and to
26
tics table represents the active current specification for
reading array data.
May 5, 2006 21557F4
Read
Write
Standby
Output Disable
Reset
Sector Protect (Note 2)
Sector Unprotect (Note 2)
Temporary Sector
Unprotect
using programming equipment. See
for the timing diagram. I
“Reading Array Data” on page 13
Operation
IL
, H = Logic High = V
IH
.
“Read Operations” on page 26
CC1
V
CC
in the DC Characteris-
Table 1. Am29LV001B Device Bus Operations
CE#
IL
± 0.3 V
X
X
L
L
L
L
L
IH
. CE# is the power
Figure 13, on page
““Sector Protection/Unprotection” on page
, V
ID
for more infor-
= 12.0 ± 0.5 V, X = Don’t Care, A
OE#
H
H
H
H
X
X
X
L
D A T A S H E E T
Am29LV001B
WE#
H
H
X
X
X
L
L
L
the register serve as inputs to the internal state
machine. The state machine outputs dictate the func-
tion of the device.
operations, the inputs and control levels they require,
and the resulting output. The following subsections
describe each of these operations in further detail.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
The device features an Unlock Bypass mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are
required to program a byte, instead of four. The
Program Command Sequence” on page 13
contains details on programming data to the device
using both standard and Unlock Bypass command
sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device.
address space that each sector occupies. A “sector
address” consists of the address bits required to
uniquely select a sector. The
on page 13
or the entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the
V
CC
RESET#
V
V
V
± 0.3 V
H
H
H
L
ID
ID
ID
IL
IN
, and OE# to V
section contains details on erasing a sector
= Address In, DIN = Data In, DOUT = Data Out
10” .
Sector Address, A6 =
Sector Address, A6 =
Addresses (Note 1)
H, A1 = H, A0 = L
L, A1 = H, A0 = L
Table 1
Table 2 on page 9
IH
A
A
A
.
X
X
X
IN
IN
IN
“Command Definitions”
lists the device bus
D
D
DQ0–DQ7
indicate the
High-Z
High-Z
High-Z
IN
IN
D
D
, D
, D
D
OUT
section
IN
IN
OUT
OUT
“Byte
7