TE28F160B3TA110 Intel, TE28F160B3TA110 Datasheet - Page 62

• Manufacturer Part Number: TE28F160B3TA110
• Manufacturer: Intel

Specifications of TE28F160B3TA110

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 20b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 1M
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
13.0
13.1
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Warning:
V
TheB3 flash memory device products provide in-system programming and erase at 2.7 V. For
customers requiring fast programming in their manufacturing environment, B3 flash memory
device includes an additional low-cost 12-V programming feature.
The 12-V V
found in manufacturing processes; however, it is not intended for extended use. 12 V can be
applied to V
blocks, and 2500 cycles on the parameter blocks. V
hours maximum.
Stressing the device beyond these limits may cause permanent damage.
During Read operations or idle times, V
operations, a 5-V supply is not permitted. The V
11.4 V to 12.6 V during Program and Erase operations.
V
The V
flash device. When V
prompting the corresponding SR.3 to be set.
PP
PP
PP
= V
Program and Erase Voltages
programming voltage can be held low for complete write protection of all blocks in the
PP
PP
IL
mode enhances programming performance during the short period of time typically
during program and Erase operations for a maximum of 1000 cycles on the main
for Complete Protection
PP
is below V
PPLK
PP
, any Program or Erase operation will result in a error,
can be tied to a 5-V supply. For Program and Erase
PP
must be supplied with either 2.7 V to 3.6 V or
PP
can be connected to 12 V for a total of 80
Datasheet